Samsung Electronics Co., Ltd.

Cheolju Kang

JungChak Ahn

Jongeun Park

Yitae Kim

Yujung Choi

Donghyuk Park

Seungwon Cha

An image sensor and a method of fabricating the same are disclosed. The image sensor may include a substrate including an active region defined by a device isolation layer, a photoelectric conversion layer, a well impurity layer, a floating diffusion region, and a transfer gate. When viewed in a plan view, a lower portion of the transfer gate may include a first surface in contact with the device isolation layer, a second surface substantially perpendicular to the first surface, and a third surface connected to the first and second surfaces. The third surface may face the floating diffusion region. A first portion of a gate insulating layer may be adjacent to the third surface and thinner than a portion adjacent to the first surface or the second surface, and this may facilitate more efficient transfer of an electron from the photoelectric conversion layer to the floating diffusion region.

Growing community of inventors

Seoul, South Korea

Cheolju Kang