Samsung Electronics Co., Ltd.

Cheolhwan Lim

Kwangho Kim

Donghun Heo

Haejung Choi

Junhee Shin

Hyunmyoung Kim

Sangjin Lim

Yongjin Lee

Himchan Park

Youngbin Kwon

A laser detecting circuit is provided. The laser detecting circuit includes a latch circuit with a first inverter configured to invert a first output signal at a first node to generate a second output signal at a second node, and a second inverter configured to generate the first output signal based on the second output signal. The second inverter includes a plurality of PMOS transistors connected in series between a first source voltage and the first node, and a plurality of NMOS transistors. A gate of each of the plurality of PMOS transistors is connected to the second node, and a drain of each of the plurality of NMOS transistors is connected to the first node. The plurality of NMOS transistors includes dummy NMOS transistors and normal NMOS transistors.

Laser detecting circuit and semiconductor apparatus including the same

A semiconductor device may include a voltage generator configured to generate a first base-emitter voltage of a first bipolar junction transistor, and a failure detector configured to generate a failure signal by comparing the first base-emitter voltage with an upper limit reference voltage and a lower limit reference voltage. The failure detector may include a second bipolar junction transistor a current source configured to generate a bias current, a first resistor coupled between the current source and a emitter of the second bipolar junction transistor to generate the upper limit reference voltage, a second resistor and a third resistor configured to divide a second base-emitter voltage of the second bipolar junction transistor to generate the lower limit reference voltage, and a first and second comparator configured to compare the first base-emitter voltage with the upper limit reference voltage and the lower limit reference voltage, respectively, to generate respective failure signals.

Semiconductor devices comprising failure detectors for detecting failure of bipolar junction transistors and methods for detecting failure of the bipolar junction transistors

A semiconductor device includes a sensing circuit including a first semiconductor element configured to generate a first current in response to externally incident light, a compensation circuit including a semiconductor element configured to generate a second current depending on an ambient temperature and to remove the second current from the first current to generate a third current, a detection circuit configured to convert the third current into a photovoltage and to compare the photovoltage with a predetermined reference voltage to determine whether an external attack has occurred, and a defense circuit configured to control the semiconductor device to perform a predetermined defense operation, based on a result of the determination.

Defense circuit of semiconductor device and semiconductor device including the same

An electronic device includes circuitry configured to output a first output signal shifting to a logic high level at a first time in response to a supply voltage reaching a first voltage level, output a second output signal shifting to a logic high level at a second time occurring after the first time in response to the supply voltage reaches a second level higher than the first level; and the circuitry includes an AND gate circuit configured to output a reset signal based on the first output signal and the second output signal.

Supply voltage detecting circuit, method of operating the same, electronic device comprising the same and electronic system comprising the same

A glitch detector includes a sensing circuit, a glitch-to-pulse generator and a comparing circuit. The sensing circuit generates a glitch voltage and at least one reference voltage based on a first power supply voltage. The glitch-to-pulse generator receives the first power supply voltage or the glitch voltage, and generates at least one pulse voltage including a pulse when the glitch occurs on the first power supply voltage. The comparing circuit generates at least one detection voltage by comparing the glitch voltage with the at least one reference voltage based on the pulse included in the at least one pulse voltage. The at least one detection voltage is activated when the glitch occurs on the first power supply voltage.

Glitch detector, security device including the same and electronic system including the same

A voltage monitoring circuit includes an initializing circuit that outputs an initialization signal generated by delaying a power supply voltage as much as a first delay time, a switching circuit that outputs a switching signal in response to a reset signal, a voltage detecting circuit that outputs a detection signal based on the power supply voltage and stops an operation in response to the switching signal, and an output circuit that outputs the reset signal based on the initialization signal and the detection signal.

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Suwon-si, South Korea

Cheolhwan Lim