University of Nebraska

Cheol-Soo Yang

Bernard Doudin

Sy-Hwang Liou

Andrei Sokolov

Lu Yuan

Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate stable, low current readable, hysteretic resistance states which are set by the flow of a relatively high, (eg. a milliamp or less), plus or minus polarity D.C. current therethrough, which resistance is monitored by lower magnitude A.C. or D.C. current flow therethrough. Preferred cells have at least one CrO /Cr O /CrO sequence but typically have multiple CrO /Cr O /CrO sequences in series.

Growing community of inventors

Lincoln, NE, United States of America

Cheol-Soo Yang