Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Sumitomo Electric Industries, Limited

Cheol Soo Sone

Hun Jae Chung

Han Kyu Seong

Soo Min Lee

Jeong Wook Lee

Jung Ja Yang

Hyun Soo Kim

Tan Sakong

Yu Seung Kim

Suk Ho Yoon

Jin Hyun Lee

Ho Sun Paek

Hee Seok Park

Jae Woong Han

Seong Suk Lee

Joon Seop Kwak

Ki Man Kang

Sung Hwan Jang

Rak Jun Choi

Yong Jo Park

There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.

Group III nitride nanorod light emitting device

There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Nitride semiconductor device

A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer.

Group III nitride nanorod light emitting device and method of manufacturing thereof

There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlInGaN, where 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, and 0&#x3c;x+y&#x3c;1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of InGaN, where 0&#x3c;x&#x3c;0.2, and GaN; a well layer including InGaN, where 0&#x3c;x&#x3c;1; a third barrier layer including one of InGaN, where 0&#x3c;x&#x3c;0.2 and GaN; and a lattice mismatch relaxation layer including one of AlInGaN, where 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, and 0&#x3c;x+y&#x3c;1, AlGaN, where 0&#x3c;x&#x3c;1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.

GaN-based semiconductor light emitting device

A nitride semiconductor light emitting device includes a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween. N-type and p-type electrodes are electrically connected to the n-type and p-type nitride semiconductors, respectively. An n-type ohmic contact layer is formed between the n-type nitride semiconductor layer and the n-type electrode and has a first layer of a material In and a second layer formed on the first layer and of a material containing W. The nitride semiconductor light emitting device has thermal stability and excellent electrical characteristics without heat treatment.

Nitride semiconductor light emitting device and method of manufacturing the same

There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InGaN layers (0&#x3c;x&#x3c;1) and at least one AlGaN layer (0&#x2266;y&#x3c;1), and the AlGaN layer is stacked between the InGaN layers.

Nitride semiconductor light emitting device

There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.

White light emitting device

There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.

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Gyunggi-do, South Korea

Cheol Soo Sone