Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Rensselaer Polytechnic Institute

Samsung Led Co., Ltd.

Korea Research Institute of Chemical Technology

Cheol-soo Sone

Tae-Hyung Kim

Jae-hee Cho

Sang-yeob Song

Jong-in Yang

Si-hyuk Lee

Jin-hyun Lee

Hak-hwan Kim

E Fred Schubert

Jong-kyu Kim

Suk-ho Yoon

Ok-hyun Nam

Sung-hyun Sim

Won-Seok Lee

Hyung-kun Kim

Kyung-wook Hwang

Jin-sub Lee

Geun-woo Ko

Jung-sub Kim

Hun-jae Chung

Hyun-gi Hong

Yong-jo Park

Dong-yu Kim

Seok-soon Kim

Sung-Won Hwang

Martin F Schubert

Dong-Hoon Lee

Jae-Hee Cho

Yu-Sik Kim

Sung Su Kim

June-o Song

Frank Wilhelm Mont

Jeong-wook Lee

Tae-yeon Seong

Bok-ki Min

Shi-Yun Cho

Dong-seok Leem

Sung-nam Lee

Nam-goo Cha

Han-Kyu Seong

Joo-sung Kim

Geon-wook Yoo

Jung-Sub Kim

Jae-wook Jeong

Yun-chan Kang

Luo Hong

Sung-won Hwang

In-hwan Lee

Hyung-duk Ko

Hyeong-soo Park

Suk-ho Choi

Jae-hyeok Heo

Geun-Woo Ko

A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Semiconductor light-emitting device and method of manufacturing the same

A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Graphene light-emitting device and method of manufacturing the same

A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.

Nitride-based semiconductor light-emitting device

The present application relates to a light-emitting device and method of manufacturing the same. The device includes a lower portion, and vertical light-emitting structures disposed on the lower portion. A conductive member partially surrounds the vertical light-emitting structures, and reflective members are disposed between the vertical light-emitting structures. The reflective members reflect light that is emitted in a lateral direction from the vertical light-emitting structures to minimize the number of times that light emitted in a lateral direction from the vertical light-emitting structure is transmitted through the light-absorbing member, thereby increasing a luminous efficiency.

Light-emitting device and method of manufacturing the same

A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Semiconductor light-emitting devices including contact layers to form reflective electrodes

An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.

Light-emitting diode for emitting ultraviolet light

An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

Method of manufacturing light-emitting device

Light-emitting device including a connection layer formed on a side surface thereof

A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.

Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer

Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.

Nitride semiconductor light-emitting device having high light efficiency and method of manufacturing the same

Growing community of inventors

Anyang-si, South Korea

Cheol-soo Sone