Lg Philips Lcd Co., Inc.

Cheol-Se Kim

Dong-Hee Kim

Myeung-Kyu Lee

A method of manufacturing a thin film transistor, includes preparing a process chamber having a stage, providing a substrate on the stage of the process chamber, injecting a first mixed gas of NH , N and SiH into the process chamber, forming a plasma in the process chamber and forming a silicon nitride film (SiNx) on the substrate, injecting a second mixed gas of H and SiH into the process chamber while removing the first mixed gas in the plasma state, forming a pure amorphous silicon film (a-Si:H) on the silicon nitride film using the second mixed gas, injecting a third mixed gas of H , SiH and PH into the process chamber while removing the second mixed gas in the plasma state, and forming a doped amorphous silicon film (n a-Si:H) on the silicon nitride film using the second mixed gas.

Growing community of inventors

Taegu, South Korea

Cheol-Se Kim