Samsung Electronics Co., Ltd.

Cheol-Min Park

Min-Koo Han

Byung-Hyuk Min

Byung-Seong Bae

Methods of forming thin-film transistors include the steps of forming an amorphous silicon (a-Si) layer of predetermined conductivity type on a face of an electrically insulating substrate and then forming a first insulating layer on the amorphous silicon layer. The first insulating layer and amorphous silicon layer are then patterned to define spaced amorphous source and drain regions having exposed sidewalls. An amorphous silicon channel region is then deposited in the space between the source and drain regions and in contact with the sidewalls thereof. An annealing step is then performed to convert the amorphous source, drain and channel regions to polycrystalline silicon, prior to the step of forming an insulated gate electrode on the channel region.

Methods of forming nonmonocrystalline silicon-on-insulator thin-film

To accomplish the objects of the present invention, among others, the present invention provides a thin-film transistor that has a channel region operatively having an offset region only during turn-off. Source and drain regions self-aligned with different ends of the channel region. A gate region is formed on a gate insulating layer disposed over the channel region and has a main gate accepting a gate voltage, a subgate which comes into ohmic contact with the source region, and a junction gate for forming a rectifying junction between the main gate and subgate.

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Kyungki-do, South Korea

Cheol-Min Park