Samsung Electronics Co., Ltd.

Cheol-Kyu Yang

Byung-Ho Ahn

Seog-Min Lee

Chul-Young Jang

Woong Hee Lee

Hun-Hyeoung Leam

Young-sub You

Jae-Chul Lee

Sung-Wook Jung

Sung-ho Kang

Yong-Kyu Joo

Sang-Cheol Ha

Dong-min Son

Dong-Min Son

Du-Han Jeon

In-Pil Cha

A wafer processing apparatus includes a reaction tube extending in a vertical direction, a door plate positioned under the reaction tube to seal the reaction tube. The door plate may be configured to load a boat into the reaction tube and support a plurality of wafers. The wafer processing apparatus may include a cap plate on the door plate, the cap plate including a cylindrical body. The cylindrical body may surround a lower side surface of the boat. A guiding recess may be formed in an outer surface of the cylindrical body along a circumferential direction of the cylindrical body. The wafer processing apparatus may include an exhaust portion configured to remove the first gas from the reaction tube through the guiding recess.

Apparatus for processing wafers

A batch type apparatus may include a tube; a boat configured to receive a plurality of semiconductor substrates, the boat vertically moved into the tube; a gas nozzle vertically arranged in the tube, the tube having a first portion and a second portion upwardly extended from the first portion; a gas pipe for supplying reaction gases to the gas nozzle, the gas pipe having a horizontal extension and a vertical extension, and the vertical extension extended in the gas nozzle; a fixing member for fixing the first portion of the gas nozzle to the gas pipe, the fixing member having strength higher than that of the gas nozzle; and a clamping member for clamping the gas pipe to the tube. Therefore, breakage of the gas nozzle may be suppressed.

Batch type apparatus for manufacturing semiconductor devices

There are provided a method and an apparatus of forming an insulating layer including silicon oxynitride. The method includes performing a plasma treatment process for supplying a plasma reaction gas to a substrate to be treated after completing the annealing process. The apparatus includes a sealed processing room having gas supply and exhaust lines running thereto. A quartz inner tube and quartz inlet pipe both include holes therethrough, but in orthogonal directions to one another, to flow a reaction gas onto the wafers loaded within the sealed processing room.

Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the same

A mass flow controller includes a base having a passage that allows a fluid to pass through the passage. A first control valve controls a mass flow of a fluid passing through the passage. A second control valve controls a full scale of the mass flow of the fluid. A bypass portion is disposed in the passage through which the fluid passes. A mass flow sensor measures the mass flow of the fluid passing through the bypass portion. The second control valve is connected to the passage adjacent to the bypass portion for controlling the full scale of the mass flow of the fluid passing through the bypass portion.

Mass flow controller

Growing community of inventors

Suwon-si, South Korea

Cheol-Kyu Yang