Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Hyundai Motor Company

Samsung Led Co., Ltd.

Kia Motors Corporation

Samsung Electro-mechanics Co., Ltd.

Yonsei University

Ulsan College Industry Cooperation

Cheol Kyu Kim

Sun Haeng Cho

Myeong-Cheol Kim

Ki Hyun Cho

Sung Kyun Park

Yong-Joon Choi

Jae Neung Kim

Kyung Seop Kim

Bo-un Yoon

Si-Young Choi

Do-hyoung Kim

Soo Min Lee

Hee-Don Jeong

Dong-hoon Khang

Dong-Hoon Lee

Jaehun Seo

Sang Ho Park

Do-Hyun Kim

Chong Sup Chang

Yoon Ho Khang

Jung Kyu Lee

Yong-Su Lee

Ho-young Kim

Se Hwan Yu

Siyoung Choi

Dong Jo Kim

Byoung-ho Kwon

Sung Haeng Cho

Seung-mo Ha

Jae-Kwang Choi

Geum-jung Seong

Myeongcheol Kim

Ki Tae Kim

Dong Eun Cha

Tae Hyung Kim

Sung-Min Kim

Yong-Hoon Son

Seung Hwan Lee

Seung Mok Lee

Suk Ho Choi

Jeong Ho Lee

Sang-Bom Kang

Heon-jong Shin

Sunjung Kim

Sang Youn Han

Jong-Ryeol Yoo

Hee Young Lee

Ki-Hyun Cho

Yong-Ho Jeon

Taeyong Kwon

Seong-Hoon Jeong

Nam Cheol Kim

Masayoshi Koike

Hyun-jung Lee

Woojin Jung

Tae-Jong Lee

Hun Soo Kim

Jong-Seo Hong

Jong In Yang

Yung Ho Ryu

Hoo Taek Cho

Kwang Jae Choi

Sung Hwan Jang

Seung-Jae Lee

Choong-Ho Lee

Sanghyun Lee

Hyung Jun Kim

Jong Hyun Choi

Donghyun Kim

Jun Ho Song

Jong-Wook Lee

Sang-Su Kim

Dae Young Lee

Gi-Gwan Park

Hee-Soo Kang

Hyun-Jo Kim

Do Young Kim

Sung-il Park

Dong-Seok Lee

Mirco Cantoro

Kyung Tea Park

Yong-Suk Tak

Suk Won Jung

Jae-yup Chung

Sung Hoon Yang

Jeong-Hwan Kim

Soo-Hun Hong

GeumJung Seong

Seung Mi Seo

Wook-Je Kim

Bok-Young Lee

Tae-yong Kwon

Hak-Sun Lee

Jong-Chan Shin

Daeyong Kim

Ki-Hyung Ko

Hee Chan Yang

Kye-Hyun Baek

Dae-Young Kwak

Jae-hyun Park

A semiconductor device includes a substrate, a first active pattern that includes a first side wall and a second side wall opposite to the first side wall in a second horizontal direction, a first insulating structure in a first trench extending in the first horizontal direction on the first side wall of the first active pattern, a second insulating structure in a second trench extending in the first horizontal direction on the second side of the first active pattern, and includes a first insulating layer on side walls and a bottom surface of the second trench, and a second insulating layer in the second trench on the first insulating layer, a gate-cut extending in the first horizontal direction on the first insulating structure, and a gate electrode extending in the second horizontal direction on the first active pattern.

Semiconductor device

A touch panel and a method of manufacturing the touch panel are provided. The touch panel includes a substrate comprising a wiring area and a sensor area, a sensing pattern located on a surface of the substrate in the sensor area, and a wiring line located on the surface of the substrate in the wiring area and electrically connected to the sensing pattern. The sensing pattern includes a plurality of first fine metal lines arranged irregularly in a mesh, and a first photosensitive layer pattern residue located between at least two of the first fine metal lines.

Touch panel and method of manufacturing the same

Field effect transistors including a source region and a drain region on a substrate, a fin base protruding from a top surface of the substrate, a plurality of fin portions extending upward from the fin base and connecting the source region with the drain region, a gate electrode on the fin portions, and a gate dielectric between the fin portions and the gate electrode may be provided. A top surface of the substrate may include a plurality of grooves (e.g., a plurality of convex portions and a plurality of concave portions). Further, a device isolation layer may be provided to expose upper portions of the plurality of fin portions and to cover top surfaces of the plurality of grooves.

Field effect transistor having fin base and at least one fin protruding from fin base

A vehicle key assembly may include a main body case; an emergency key including a key portion and a knob connected to the key portion and provided to be introduced into the main body case; a restraining member; and a manipulator configured to operate the restraining member, wherein the knob includes: a knob case connected to the key portion and configured to close an opening of the main body case in a state of being accommodated in the main body case; a key ring member mounted on the knob case to be introduced into or retracted from the knob case to be protruded to an outside of the main body case; and one or more elastic members provided in the knob case and configured to press the key ring member in a protrusion direction in which the key ring member is protruded.

Vehicle key assembly

Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.

Semiconductor devices and methods of fabricating the same

An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Integrated circuit device and method of forming the same

A semiconductor device includes a substrate having a plurality of fins protruding therefrom. The plurality of fins includes a plurality of active fins and at least one non-active fin disposed between ones of the plurality of active fins. The device also includes at least one gate electrode crossing at least a portion of the active fins. The device further includes a plurality of source/drain regions disposed on the active fins adjacent the at least one gate electrode and separated from one another by the at least one non-active fin.

Semiconductor device including non-active fins and separation regions

A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device may include forming a sacrificial layer on a substrate including a first region and a second region, forming a first pattern on the sacrificial layer of the second region, forming a second pattern on the sacrificial layer of the first region, forming first upper spacers on opposite sidewalls of the second pattern, removing the second pattern, etching the first sacrificial layer of the first region using the first upper spacers as an etch mask to form a third pattern, etching the first sacrificial layer of the second region using the first pattern as an etch mask to form a fourth pattern, forming first lower spacers at either side of the third pattern, forming second spacers on opposite sidewalls of the fourth pattern, removing the third pattern and the fourth pattern, and etching the substrate using the first lower spacers and the second spacers as etch masks.

Method of manufacturing semiconductor device using multiple patterning techniques

An organic light emitting diode display includes: a display module including a first organic light emitting diode to emit light with a first wavelength, a second organic light emitting diode to emit light with a second wavelength, and a third organic light emitting diode to emit light with a third wavelength; a phase difference layer including a first liquid crystal pattern on the first organic light emitting diode, and a second liquid crystal pattern on the second organic light emitting diode and the third organic light emitting diode; and a linear polarization layer on the phase difference layer.

Organic light emitting diode display, optical unit, and method for manufacturing optical unit

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

Semiconductor devices having lower and upper fins and method for fabricating the same

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Seoul, South Korea

Cheol Kyu Kim