Samsung Electronics Co., Ltd.

Hyundai Powertech Co., Ltd.

Cheol Jin Kim

Yun Ic Hwang

Yu Jeub Ha

Seok Ha Hong

Pung Yeun Cho

Kyoung Ho Kim

Tae Ho Kim

Sung Soo Park

Sung Kwang Kim

Seok Weon Hong

Kobayashi Shozo

Kil Young Lee

Eun Oh Kim

Pung Yeon Cho

Jongchul Park

Hyun Ho Jung

Dong Kwon Kim

Hyo Jin Kim

Dong-Ho Lee

Tae Woo Kim

SAng Hyeon Kang

Kil Hong Lee

Guen Yong Park

Chan Young Park

Dong Ho Lee

Sung-il Park

Dae Won Ha

Yong-Ho Jeon

Chan Jae Park

Han Seong Kang

Sung Wook Kang

Do Y Choi

Nam Soo Park

Chan Min Park

Sung Min Kim

Hyun Suk Kim

Kye-Hyun Baek

Jae-hyun Park

Tae-woo Kim

Sang Hyun Kang

Hyung-suk Lee

Jong Hak Hyun

Yun-il Lee

HyunHo Jung

Jae Hyoun Kim

Yeon-Tae Lee

Dongkwon Kim

Jeong Yeon Seo

Min Serk Kim

Jin Hae Cho

Jin Hee Cho

Ho Yeun Lee

Dong Woo Han

Kyuoung Ho Kim

Hyunho Jung

Suk Yoon Yum

A semiconductor device includes a substrate including a first active pattern and a second active pattern, a gate electrode including a first gate electrode on the first active pattern and a second gate electrode on the second active pattern, a gate cutting pattern between the first and second gate electrodes, gate spacers on opposing side surfaces of the gate electrode, and a gate capping pattern on top surfaces of the gate electrode, the gate cutting pattern, and the gate spacers and extending in the first direction. The gate cutting pattern includes a first and second side surfaces, which are opposite to each other in a second direction crossing the first direction. The first and side surfaces are in contact with respective ones of the gate spacers, and the top surface of the gate cutting pattern is closer to the substrate than the top surfaces of the pair of gate spacers.

Semiconductor device and method of fabricating the same

A semiconductor device is provided. The semiconductor device includes a substrate, a first active pattern, which extends in a first direction on the substrate, a second active pattern, which extends in the first direction on the substrate and is spaced apart from the first active pattern by a first pitch in a second direction different from the first horizontal direction, a third active pattern, which extends in the first direction on the substrate and is spaced apart from the second active pattern by a second pitch greater than the first pitch in the second direction, a field insulating layer, which borders side walls of each of the first to third active patterns, a dam, which is between the first active pattern and the second active pattern on the field insulating layer, the region between the second active pattern and the third active pattern being free of the dam, a gate electrode, which extends in the second direction, and has a first portion on the first active pattern, a second portion on the second active pattern, and a third portion on the third active pattern, a first work function layer between the first portion of the gate electrode and the dam, and a second work function layer between the second portion of the gate electrode and the dam.

Semiconductor device

A semiconductor device includes: a substrate; an active pattern and a field insulating layer surrounding a sidewall of the active pattern on the substrate; first and second gate electrodes on the active pattern and extending in a direction different from that of the active pattern; an interlayer insulating layer surrounding a sidewall of each of the first and second gate electrodes; a gate spacer on opposing sidewalls of each of the first and second gate electrodes that includes a first sidewall and a second sidewall opposite the first sidewall in the first horizontal direction, each of which contacts the interlayer insulating layer; and a first gate cut dividing the second gate electrode into two portions, wherein the first gate cut includes a same material as the gate spacer; and wherein a first width of the first gate cut is smaller than a second width of the gate spacer.

Semiconductor devices

Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.

Semiconductor device and a method of manufacturing the semiconductor device

An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Integrated circuit device and method of forming the same

A semiconductor device including a substrate, first and second active patterns, each including first and second side walls, a field insulation layer surrounding side walls of each of the first and second active patterns, a first dam between the first and second active patterns and having a lower surface lower than an upper surface of the field insulation layer, a second dam spaced apart from the first side wall of the first active pattern and having a lower surface lower than the upper surface of the field insulation layer, a first gate electrode on the first dam between the first and second active patterns, a second gate electrode spaced apart from the first gate electrode, and a first gate cut spaced apart from each of the first side walls of each of the first and second active patterns and intersecting each of the first and second gate electrodes.

Semiconductor device and method for fabricating the same

A semiconductor device includes first and second active regions parallel to each other and respectively extending in a first direction, an isolation layer between the first and second active regions, a first line structure and a second line structure overlapping the first and second active regions and the isolation layer, parallel to each other, and extending in a second direction, a first source/drain region on the first active region, and a second source/drain region on the second active region. The first line structure includes a first gate structure, a second gate structure, and a first insulating separation pattern between the first and second gate structures. The second line structure includes a third gate structure, a fourth gate structure, and a second insulating separation pattern between the third and fourth gate structures. The first and second insulating separation patterns are spaced apart from each other. The first insulating separation pattern has first and second side surfaces opposing each other, and third and fourth side surfaces opposing each other. At least one of the first and second side surfaces and at least one of the third and fourth side surfaces have different side profiles.

A semiconductor device includes a substrate having first and second active regions. A first active pattern is on the first active region and includes first source/drain patterns and a first channel pattern therebetween. A second active pattern is on the second active region and includes second source/drain patterns and a second channel pattern therebetween. A gate electrode includes a first gate electrode on the first channel pattern and a second gate electrode on the second channel pattern. A gate cutting pattern is between the first and second gate electrodes and separates the first and second gate electrodes from each other. A pair of gate spacers is on opposite sidewalls of the first gate electrode extending along opposite sidewalls of the gate cutting pattern towards the second gate electrode. The gate cutting pattern includes first to third parts having maximum widths that increase from the first to the third part.

A cooking apparatus, a cooking apparatus controlling system, and a method of controlling a cooking apparatus are provided. The cooking apparatus controlling system includes a first cooking apparatus having a user interface configured to receive a user command from a user and a second cooking apparatus separated from the first cooking apparatus and configured to receive the user command input to the first cooking apparatus and operate according to the user command. The user interface receives one or more of a user command related to the first cooking apparatus and a user command related to the second cooking apparatus. The first cooking apparatus includes a first communicator. The second cooking apparatus includes a second communicator configured to communicate with the first communicator.

Cooking apparatus, cooking apparatus controlling system, and method of controlling cooking apparatus

A steam cooking apparatus with improved water supply and drainage structures. The apparatus includes a body, a cooking compartment, a steam generator to supply steam into the cooking compartment, a water vessel to store water and supply the water into the steam generator, a water supply device including a holder and a slider slidably mounted in the holder so as to be withdrawn from the body, a first water supply tube connecting the slider and the water vessel, a second water supply tube connecting the water vessel and the steam generator, and a drain tube to drain water in the steam generator to the outside of the body. The drain tube includes an end fixed to the slider so that the end of the drain tube is withdrawn with the slider from the body when water in the steam generator is drained to the outside.

Steam cooking apparatus

A double clutch transmission (DCT) provides eight forward speeds and one reverse speed while minimizing the number of gear trains used for changing speed and the whole length thereof. In particular, the DCT has a simple structure using four or five gear trains and four synchro devices and is capable of providing eight forward speeds and one reverse speed while reducing the entire weight thereof. In a conventional DCT, when a gear train is added to increase the number of speed stages, the whole length thereof is increased. The provided DCT can minimize the whole length and the weight thereof, thereby reducing the manufacturing cost, the number of parts, and the fuel efficiency.

Double clutch transmission

An oven, which both satisfies heat insulating and cooling of a door by adjusting an air flow in channels formed in the door. The oven includes a plurality of channels provided in a door, into which external air flows, accompanied with air discharged by a discharge duct, such that the air flows in the plurality of the channels, and a flow conversion part formed above at least one of the plurality of the channels for stagnating the flow of air. Since the door insulates a cooking chamber from heat and is cooled using a difference of pressures between upper and lower portions of the door, the oven concurrently satisfies conflicting two requirements, such as heat insulating and cooling of the door.

Multi-glass door cooling oven

The present invention relates to a power train of an automatic transmission, which includes seven rotating elements configured through two planetary gear sets, and selectively fastens three rotating elements through four clutches and three brakes, thereby providing nine forward speeds and one reverse speed.

Power train of automatic transmission

The present invention relates to a powertrain for an automatic transmission. The powertrain for an automatic transmission consisting of an input shaft, an output shaft and first to third planetary gear sets comprises: first to seventh actuating elements constituting the first to third planetary gear sets; and shifting elements including first to fourth clutches and first and second brakes, wherein at least two of the shifting elements are actuated so that the first to seventh actuating elements are driven or restrained, thereby implementing eight forward speed and two reverse speed ratios.

Powertrain for automatic transmission

An over having an improved exhaust structure capable of discharging a fluid of the inside of a cooking chamber at a constant rate, the oven including a cooking chamber cooking food, a machine chamber disposed at an upper side of the cooking chamber and accommodating an electronic component, a cooling fan unit disposed at an inside of the machine chamber to cool the machine chamber, and a flow passage guide communicating with an inside the cooking chamber and an inside of the cooling fan unit such that a fluid of the inside of the cooking chamber is introduced to the inside of the cooling fan unit, wherein the cooling fan unit includes a cooling fan configured to suck a fluid of the inside the machine chamber and blow the fluid to the outside environment.

Oven

Growing community of inventors

Suwon-Si, South Korea

Cheol Jin Kim