Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Cheol-Ho Park

Byoung-Kwon Choo

Hee-Geun Son

Kwon-Hyung Lee

Jae-Beom Choi

Do-Yeob Kim

Jong-Hyun Yun

Chun-Gi You

Jong-Hyun Park

Yul-Kyu Lee

Won-Kyu Lee

Eun-Jung Lee

Jae-Hwan Oh

Seong-Hyun Jin

Hyun-Been Hwang

Young-Jin Chang

Soo-Hyun Kim

Joong-Heon Kim

Jin-Uk Lee

Jeong-Soon Shin

Kyeong-Beom Cheong

Sun Woo Park

Seung Bum Suh

In-Do Chung

Ho-Yul Baek

Sung-Chul Pyo

Eun-Cheol Kim

Byung-Sul Kim

Young-Hwa Ko

Hee-Kwan Chai

No-Kap Park

A system for predicting the thickness of a battery is disclosed. In one aspect, the battery thickness predicting system includes a learning data input unit for receiving data on a previously manufactured battery. The thickness predicting system further includes an object data input unit for receiving data on a battery whose thickness is to be predicted. The system further comprises a mechanical learning unit connected to the learning data input unit to obtain a predicting function based on learning factors input to the learning data input unit and to provide weight values to the learning factors, respectively. The system further includes a thickness predicting unit connected to the object data input unit and the mechanical learning unit and using the weight values provided by the mechanical learning unit in order to predict the thickness of the battery whose thickness is to be predicted.

System for predicting thickness of battery and method for predicting thickness of battery

A method of controlling a laser beam annealing apparatus to manufacture a thin film transistor substrate, the method including: irradiating a laser beam emitted from a laser beam irradiator onto an amorphous silicon layer on a substrate supported by a substrate support; obtaining photographic data with respect to at least a part of the substrate by using a photographic unit; and adjusting a position of at least one of the substrate support or the laser beam irradiator by using a position adjuster based on the photographic data obtained by the photographic unit.

Method of controlling a laser beam annealing apparatus to manufacture thin film transistor substrate

An apparatus for inspecting crystallization includes a substrate including a semiconductor layer, the semiconductor layer includes a plurality of crystallized regions separated from each other; a stage configured to change a position of the substrate, the substrate being seated thereon; a photographing unit configured to acquire image data regarding the semiconductor layer; an inspection unit configured to obtain inspection data regarding the semiconductor layer; and a control unit configured to output change data regarding a change in the position of the substrate according to the image data acquired by the photographing unit.

Apparatus and method for inspecting crystallization

A laser annealing apparatus includes a lens unit configured to transmit a laser beam to be irradiated onto an irradiation target; a lens unit housing accommodating the lens unit and having an opening configured to allow the laser beam to pass through the opening; a blocking plate configured to block at least a portion of the laser beam reflected by the irradiation target after being transmitted through the lens unit to the irradiation target; and a cooling unit between the blocking plate and the lens unit housing.

Laser annealing apparatus

A laser annealing apparatus reduces laser annealing time and has a simple configuration. A laser annealing method is used to manufacture a display apparatus. The laser annealing apparatus includes a mounting unit, a substrate mounted on the mounting unit, first and second driving modules installed on the mounting unit and adjusting locations of first and second mark masks to be placed on a part of the substrate, first and second image modules that may obtain image data regarding the first and second mark masks to be location-adjusted by first and second driving modules, and a laser module that radiates a laser beam to the substrate and changes at least a part of an amorphous silicon layer of the substrate to crystalline silicon.

Laser annealing apparatus and method, and display apparatus manufactured by this method

Laser crystallization equipment includes a laser generator generating a laser beam, the laser beam being directed toward a processing target substrate, and a blade member over the processing target substrate, the blade member being configured to chop the laser beam with a predetermined width in two directions, wherein two ends of the laser beam chopped by the blade member are irradiated to the processing target substrate as diffraction light.

Laser crystallization apparatus and method for manufacturing thin film transistor array panel using the same

A crystallization apparatus that performs crystallization on a substrate using sequential lateral solidification (SLS) includes a laser generating device for emitting a laser beam, a first telescope lens module and a second telescope lens module at one side of the laser generating device for minimizing a divergent angle of a laser beam emitted by the laser generating device; and a main optical system at one side of the second telescope lens module for uniformizing and amplifying a laser beam transmitted through the second telescope lens module. The main optical system is rotatably formed with respect to the laser generating device.

Crystallization apparatus using sequential lateral solidification

A thin film transistor (TFT) having an active layer pattern, the active layer pattern including a first active layer pattern extending in a first direction; a second active layer pattern extending in the first direction and parallel to the first active layer pattern; and a third active layer pattern connecting a first end of the first active layer pattern to a first end of the second active layer pattern.

Thin film transistor including an active layer pattern, method of manufacturing the same, and organic light emitting display apparatus

An organic light emitting diode display including a substrate; a light blocking layer disposed on the substrate and having a semiconductor opening; a first semiconductor pattern disposed in the semiconductor opening; a gate insulating layer disposed on the light blocking layer and the first semiconductor pattern; a first gate electrode disposed on the gate insulating layer; a first source electrode electrically connected to the first semiconductor pattern; a first drain electrode spaced apart from the first source electrode; a protective insulating layer disposed on the first source electrode and the first drain electrode, the protective insulating layer having a contact portion; a pixel electrode disposed on the protective insulating layer contacting the first drain electrode through the contact portion; an emitting layer disposed on the pixel electrode; and a common electrode disposed on the emitting layer.

Organic light emitting diode display and method of manufacturing the same

A flat panel display having a thin-film transistor (TFT) and a pixel unit and a method of manufacturing the same are disclosed. In one embodiment, the method includes forming a step difference layer having a relatively high step and a relatively low step on a substrate and forming an amorphous silicon layer on the step difference layer along a height shape of the step difference layer. The method further includes crystallizing the amorphous silicon layer into a crystalline silicon layer and polishing the crystalline silicon layer to form a planarized surface of the crystalline silicon layer having no height differences so that the crystalline silicon layer remains on a region corresponding to the low step and an active layer is formed. According to this method, crystallization protrusions are effectively removed from the active layer, and thus, stable brightness characteristics of the display apparatus are guaranteed.

Flat panel display and method of manufacturing the same

Disclosed is a method of manufacturing an organic light-emitting display device capable of improving efficiency of a laser generator used for crystallization of amorphous silicon. The method crystallizes amorphous silicon selectively to provide an organic light-emitting display device that includes channel area of a pixel contains polycrystalline silicon and storage area of the pixel contains amorphous silicon.

Organic light-emitting display device and method of manufacturing the same

A mask for crystallizing a semiconductor layer includes a plurality of first main-slit portions, a plurality of second main-slit portions, upper slit portion and lower slit portion. The first main-slit portions extend along an inclined direction with respect to a first direction. The second main-slit portions are spaced apart from the first main-slit portions. The upper slit portion is disposed on the first main-slit portions along a second direction to be parallel to the first main-slit portions, and extends partway over the second main-slit portions to be longer than the first main-slit portions. The lower slit portion is disposed under the second main-slit portions along the second direction to be parallel to the second main-slit portions, and extends partway under the first main-slit portions to be longer than the second main-slit portions.

Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same

Provided is a lithium secondary battery including a positive electrode having a positive electrode active material, a negative electrode having a negative electrode active material, and a polymer electrolyte composition having a polymer electrolyte, a non-aqueous organic solvent, and a lithium salt. The content of the polymer electrolyte is 9 to 20 wt %, based on the total weight of the polymer electrolyte composition.

Lithium secondary battery and method of controlling short resistance thereof

A mask for sequential lateral solidification (SLS) which is capable of preventing an overlapping region and a diagonal stain based on a crystallization pattern of an active layer. The mask for SLS, which moves in a first direction and selectively transmits a laser beam emitted by a laser emitting device, includes slits which are formed such that the width of a slit in the first direction is smaller than the width of the slit in a second direction, which is perpendicular to the first direction. Each of the slits is tilted by a predetermined angle with respect to the first direction.

Growing community of inventors

Yongin, South Korea

Cheol-Ho Park