Yangtze Memory Technologies Co., Ltd.

Huazhong University of Science and Technology

Chenhui Li

Hongtao Liu

XiangNan Zhao

Lei Jin

Yusheng Shi

Chunze Yan

Shifeng Wen

Jiamin Wu

Zhaoqing Li

Jianquan Jia

Peng Chen

Ying Cui

Xiaojiang Guo

Hua Tan

Yi Zhang

Feng Xu

Jialiang Deng

Yuanyuan Min

Wei Zhu

Wei Qi

Junbao Wang

Lichao Zhang

Zhongfeng Xu

Hua Fu

Zhenjia Chen

Zhufeng Liu

Methods, systems, and apparatus, including computer programs encoded on computer storage media, for operating a memory device having multiple storage modes. In one example method, a portion of a memory array is selected, wherein the portion of the memory array is programmable in a first storage mode or a second storage mode. The second storage mode has a lower storage density than the first storage mode, and the first storage mode corresponds to a first erase operation. A switch erase operation is performed to switch the portion of the memory array from the first storage mode to a switched second storage mode, wherein the switched second storage mode has the same storage density as the second storage mode and corresponds to the switch erase operation. The switch erase operation is different from the first erase operation on the memory array in the first storage mode.

Erase and program operations for memory devices having multiple storage modes

The present disclosure provides a memory device, a memory system, and an operation method of a memory device, and relates to the technical field of semiconductor chips. The memory device includes a memory cell array including a source layer, a bottom select gate layer, and a gate layer, and the bottom select gate layer is located between the source layer and the gate layer, wherein the bottom select gate layer includes a plurality of bottom select gates, and a bottom select gate of a first memory string and a bottom select gate of a second memory string are connected with a same select line; and a peripheral circuit coupled to the memory cell array, wherein the peripheral circuit is configured to apply a selection voltage to the select line to control the first memory string and the second memory string.

Memory devices and operating methods thereof, memory systems

The present application discloses a memory, a memory system, and a method for operating memory, which belongs to the memory techniques field. The method for operating memory comprises determining a storage state of a reference memory cell, determining a discharge duration of a sensing node corresponding to a target memory cell based on the storage state of the reference memory cell, and reading the target memory cell based on the discharge duration of the sensing node corresponding to the target memory cell to obtain read results. The target memory cell and the reference memory cell are located in the same string and are adjacent, and the programming order of the reference memory cell is after that of the target memory cell. The present application may reduce the influence on reading memory cells by interlayer interference and improve the accuracy of reading memory cells.

Memory, a memory system, and a method for operating memory

Disclosure includes systems, methods and devices to program a memory device, involving a first and a second programming operations on a memory cell of the memory device. In the first programming operation, the memory cell is programmed into an intermediate state. In the second programming operation, the memory cell is programmed from the intermediate state into a target state. The first programming operation includes providing a bias voltage to a bit line coupled to the memory cell and providing a programming voltage to a word line coupled to the memory cell. An amplitude of the bias voltage provided to the bit line depends on the intermediate state or the target state the memory cell to be programmed into. Accordingly, no verification operation need to be performed on the memory cell in the first programming operation.

Memory device, memory system, and program method thereof

A selective laser sintering (SLS) device. The SLS device includes a laser forming unit, a support platform and a driving mechanism. The support platform is configured to support a plurality of raw materials for additive manufacturing of an object including a plurality of sections. The laser forming unit is disposed on the support platform and is configured to lay powders on a surface of each section of the object and sinter the powders. The driving mechanism is disposed under the laser forming unit and includes a vertical driving mechanism and a horizontal driving mechanism. The vertical driving mechanism is connected to the laser forming unit and configured to lift the laser forming unit layer by layer. The horizontal driving mechanism is configured to drive the laser forming unit to move in a horizontal direction with respect to the support platform.

Selective laser sintering device

A method of preparing a C/C-SiC composite part, including: preparing, using a solvent evaporation process, carbon fiber composite powders coated with a phenol resin; according to a three-dimensional model of a to-be-prepared part, forming a green part corresponding to the to-be-prepared part using the carbon fiber composite powders and a 3D printing technology; densifying the green part to yield a C/C porous body having a density of 0.7 to 1.1 g/cmand an open porosity of 30 to 50%; and siliconizing the C/C porous body under vacuum, removing excess silicon to yield a primary carbon fiber reinforced carbon-silicon carbide (C/C-SiC) body, densifying the primary C/C-SiC body, to obtain a final C/C-SiC composite part.

Method of preparing carbon fiber reinforced carbon-silicon carbide composite part

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Wuhan, China

Chenhui Li