University of California

Leland Stanford Junior University

Chenhao Ren

Srabanti Chowdhury

Mohamadali Malakoutian

Matthew A Laurent

Siwei Li

In certain examples, methods and semiconductor structures are directed to an integrated circuit (IC) having a diamond layer section and a GaN-based substrate being monolithically integrated or bonded as part of the same IC. In a specific example, the GaN-based substrate includes GaN, AlGaN (0<x<1; x+y=1) and a dielectric layer, and a diamond layer section which may include polycrystalline diamond. The IC includes: a GaN-based field effect transistor (FET) integrated with a portion of the GaN-based substrate, and a diamond-based FET integrated with a portion of the diamond layer section, the diamond FET being electrically coupled to the GaN-based FET and situated over or against a surface region of the GaN-based substrate.

Growing community of inventors

Davis, CA, United States of America

Chenhao Ren