Tokyo Electron Limited

Chengya Chu

Yoshiki Igarashi

Jun Lin

Satoru Kikushima

Takayuki Suga

An etching method for selectively etching a material containing Si and O is provided. The etching method includes providing a substrate containing the material containing Si and O in a chamber, repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas, which is started next, with at least a part of the second period not overlapping with the first period, and heating and removing a reaction product generated by the supply of the basic gas and the supply of the fluorine-containing gas.

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Hsin-chu, Taiwan

Chengya Chu