Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Hefei Boe Optoelectronics Technology Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Boe Technology Groupco., Ltd.

Chengshao Yang

Binbin Cao

Tao Ma

Yinhu Huang

Ling Han

Haijiao Qian

Yunhai Wan

Ke Cao

Lin Chen

Botao Song

Wei He

Jun Ma

Wenlong Wang

Zhixiang Zou

Biao Luo

Ning Zhang

Bozhu Zhou

Dengfeng Wang

Peng Hui Jiang

Ning Liu

Peng Chen

Lianjie Qu

Yonglian Qi

Xiaoye Ma

Haipeng Yang

Xianxue Duan

Ran Zhang

Cheng Chen

Ruifang Du

Bingqiang Gui

Mengyu Luan

Wenhao Tang

Yu Ji

Junhao Han

Shengli Liu

Chuan Chen

Jongwon Moon

Yunlong Wang

Ronghua Jin

Pengyu Chen

Myoung Kee Baek

Huanhuan Huang

Qingmeng Wu

Jufeng Yu

The present disclosure provides a liquid crystal writing board and a method for repairing the same. The liquid crystal writing board includes a first substrate, a second substrate, and a bistable liquid crystal layer disposed between the first substrate and the second substrate. The first substrate includes a plurality of first signal line groups, the first signal line group including at least two first signal lines; a plurality of second signal lines, the first signal lines and the second signal lines intersecting with each other; and a control electrode disposed in an area surrounded by two adjacent first signal lines and two adjacent second signal lines, the first signal lines and the second signal lines being configured to jointly provide control signals to the control electrode. The first signal lines in the first signal line group are electrically connected with each other.

Liquid crystal writing board and method for repairing the same

A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes: a base substrate; a sealant on the base substrate; and a contact layer between the base substrate and the sealant, the contact layer being in contact with the sealant. In the display substrate, a contact layer surface of the contact layer, which is away from the base substrate, is not flat at a contact position where the contact layer is in contact with the sealant.

Display substrate and manufacturing method thereof and display apparatus

The present disclosure provides a manufacturing method of a display substrate, a display substrate and a display device, belongs to the field of display technology, and can at least partially solve a problem of residual sand in the display substrate. The manufacturing method of the display substrate includes: providing a base; forming a passivation layer on a surface of the base; forming an amorphous oxide conductive material layer on a surface of the passivation layer facing away from the base; forming a photoresist pattern on the oxide conductive material layer, the photoresist pattern having an exposure region; etching a portion of the oxide conductive material layer in the exposure region of the photoresist pattern to form a hollow position exposing a portion of the passivation layer; and removing a certain thickness material of the portion of the passivation layer exposed through the hollow position.

Manufacturing method of display substrate for removing residual sand

An array substrate, a manufacturing method thereof, and a display panel are provided. The array substrate comprises a base substrate, a plurality of gate lines and gate electrodes on the base substrate, each gate electrode being corresponding to and separate from a respective gate line, a gate insulating layer over the gate electrode and the gate line, the gate insulating layer having a first via hole and a second via hole, the first via hole exposing the gate electrode, the second via hole exposing the gate line, a conductive connection layer and a polysilicon semiconductor layer on the gate insulating layer, the conductive connection layer filling the first via hole and the second via hole to connect the gate line with the gate electrode.

Array substrate, manufacturing method thereof, display panel

An array substrate includes a base substrate and a GND trace. The GND trace is disposed along an edge of the substrate, and the GND trace includes a plurality of conductive line segments separated from each other and a connection structure disposed on a side of the GND trace away from the base substrate. The connection structure electrically connects the conductive line segments.

Array substrate, display panel and display device

A manufacturing method of an array substrate, an array substrate and a display device are disclosed. The manufacturing method of the array substrate includes: providing a base substrate (); forming a semiconductor layer on the base substrate; depositing an etch stop layer material on the semiconductor layer; subjecting the etch stop layer material to a wet etching process to form an etch stop layer; subjecting the semiconductor layer to a dry etching process to form an active layer, wherein the active layer includes a first region and a second region surrounding the first region, an orthographic projection of the etch stop layer on the base substrate completely coincides with an orthographic projection of the first region of the active layer on the base substrate.

Manufacturing method of array substrate using dry etching processing and wet etching processing, array substrate and display device

A display substrate, a manufacturing method thereof and a display apparatus are provided. The display substrate includes: a base substrate; a sealant on the base substrate; and a contact layer between the base substrate and the sealant, the contact layer being in contact with the sealant. In the display substrate, a contact layer surface of the contact layer, which is away from the base substrate (A), is not flat at a contact position where the contact layer () is in contact with the sealant ().

The present disclosure relates to the field of display technologies, and discloses a Thin Film Transistor, a method for preparing the same, an array substrate, a display panel and an apparatus. The TFT includes: a base substrate; an active layer; a source electrode; and a drain electrode; where the active layer, the source electrode, and the drain electrode are sequentially laminated on the base substrate; and a projection of the source electrode on the base substrate covers a projection of part of edges of the active layer on the base substrate.

Thin film transistor, method for preparing the same, array substrate, display panel and apparatus

The present disclosure provides a display substrate, a manufacturing method thereof, and a display device. The display substrate includes a base substrate and thin-film transistors disposed on the base substrate, where the thin-film transistors each comprises a gate, an active layer insulated from the gate, and two ohmic contact parts in direct contact with the active layer, leaving a gap region between the two ohmic contact parts; and each of the ohmic contact parts comprises a lightly doped region and a heavily doped region, and an orthographic projection of the lightly doped region on the base substrate and an orthographic projection of the heavily doped region on the base substrate do not overlap each other.

Display substrate, manufacturing method thereof, and display device

The present disclosure provides a thin film transistor, including: an active layer, a source and a drain electrically coupled with the active layer, and a plurality of doped layers located between the source and the active layer and between the drain and the active layer, a resistance of one of the plurality of doped layers farthest away from the active layer is smaller than that of any other doped layer. The disclosure further provides a gate driving circuit, a display substrate and a display device. With the present disclosure, current loss of a current passing through the doped layers of the thin film transistor is reduced, on-state current of the thin film transistor is improved and a situation that output signals of the thin film transistor are insufficient is avoided.

Thin film transistor and manufacturing method thereof, gate driving circuit, display substrate and display device

The present application discloses a thin film transistor having an active layer including a channel part, a source contact part, and a drain contact part. At least one of the source contact part and the drain contact part has a contacting edge having one or more irregularities along the contacting edge.

Thin film transistor and display apparatus

An array substrate and a vehicle-mounted display device. A first transistor of the array substrate includes a source electrode connected with a pixel electrode, a drain electrode and a gate electrode, a compensation gate electrode connected with the gate electrode, the sum of an overlapping region of the source electrode and the gate electrode and an overlapping region of the source electrode and the compensation gate electrode is a first overlapping region. A second transistor includes a source electrode connected with a pixel electrode, a drain electrode and a gate electrode, a compensation gate electrode connected with the gate electrode, the sum of an overlapping region of the source electrode and the gate electrode and an overlapping region of the source electrode and the compensation gate electrode is a second overlapping region. An area of the first overlapping region is equal to an area of the second overlapping region.

Array substrate and vehicle-mounted display device

A transistor and a method for manufacturing the same, a display substrate, and a display apparatus are provided. The transistor may include: a substrate; an active region on the substrate and including a polycrystalline silicon region; an etch stop layer at a side of the polycrystalline silicon region distal to the substrate; and a first heavily doped amorphous silicon region and a second heavily doped amorphous silicon region both at a side of the etch stop layer distal to the substrate; the polycrystalline silicon region having a first side surface corresponding to the first heavily doped amorphous silicon region and a second side surface corresponding to the second heavily doped amorphous silicon region; wherein an orthographic projection of the polycrystalline silicon region on a plane in which a lower surface of the etch stop layer lies does not go beyond the lower surface of the etch stop layer.

Transistor and method for manufacturing the same, display substrate, and display apparatus

A manufacturing method of a via hole, a display substrate and a manufacturing method thereof are provided. The manufacturing method of a via hole includes: forming a first via hole penetrating the passivation protection layer, the first via hole being defined by a first side wall of the passivation protection layer; forming an organic insulating layer on the passivation protection layer; and forming a second via hole penetrating the organic insulating layer, the second via hole being defined by a second side wall of the organic insulating layer; wherein in a sectional view, a bottom of the second via hole is located in the first via hole and is in direct contact with the conductive layer, and the second side wall of the organic insulating layer is separated from the first side wall of the passivation protection layer.

Manufacturing method of via hole, display substrate, and manufacturing method thereof

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Beijing, China

Chengshao Yang