Guangdong University of Technology

Chengqiang Cui

Xin Chen

Yu Zhang

Guannan Yang

Yun Chen

Jian Gao

Qiang Liu

Xun Chen

Dachuang Shi

Peilin Liang

Jin Tong

Guangdong Xu

Kai Yang

A method for preparing a nano metal paste, including the following steps. (S1) An organic metallic salt and an organic reducing agent are added into water or an organic solvent to obtain a first mixture. (S2) The first mixture is reacted under heating to obtain a second mixture containing metal nanoparticles. (S3) The second mixture is concentrated to obtain a nano metal paste containing 20-95% by weight of the metal nanoparticles. A conductive paste and A conductive ink prepared by using the nano metal paste as filler are also provided.

Nano metal paste, and preparation and application thereof

This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

Interconnect structure for semiconductor with ultra-fine pitch and forming method thereof

A method for repairing a fine line is provided. Nano metal particles are filled in a defect of a circuit board. The nano metal particles in the defect are irradiated by a laser, or heated, such that the nano metal particles in the defect are metallurgically bonded to an original line of the circuit board. A surface of the circuit board is cleaned to remove residual nano metal particles on parts of the circuit board where metallurgical bonding is not performed, thereby completing line repairing of the circuit board.

Method for repairing a fine line

A method for synchronous electroplating filling of differential vias and an electroplating device. Laser irradiation is adopted as an external energy field to assist synchronous electroplating filling of differential vias. A mask or digital maskless technology is used to precisely heat the vias with different positions and different sizes. The filling rate of different regions varies with the temperature difference, thereby realizing the synchronous electroplating filling of differential vias in one step. In the processes of immersion pre-wetting by the electroplating liquid and electroplating filling copper, the laser is used for preheating the wafer processed with vias. In these two steps, the laser needs to locally and precisely heat upper surfaces of the micro vias on the wafer through the mask corresponding to the micro vias on the wafer.

Method for synchronous electroplating filling of differential vias and electroplating device implementing same

A method for synchronous wet etching processing of differential microstructures, including the following steps: step a: performing photoetching on a processing surface of a workpiece to be processed to develop the workpiece; step b: affixing a mask to a surface opposite to the processing surface of the workpiece; step c: continuously cooling the mask; step d: placing the cooled mask and the workpiece in a wet etching device; and adding an etchant to the processing surface of the workpiece to start etching; step e: removing the mask and the workpiece from the wet etching device after the set etching time; separating the mask and the workpiece to obtain a workpiece with a etching structure. A temperature difference is formed between the pattern area to be processed and the retaining area.

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Guangdong, China

Chengqiang Cui