Shenzhen China Star Optoelectronics Technology Co., Ltd.

Chenglung Chiang

Polin Chen

Tzuchieh Lai

Runze Zhan

Zhe Hu

Chengyuan Dong

Yuting Chen

The present invention provides a method for manufacturing a thin-film transistor substrate, which has a simple process and achieves an excellent contact interface between an oxide semiconductor layer and source/drain terminals through successive film forming so as to prevent crowding effect resulting from excessive contact resistance. Further, by using a metallic material containing tantalum to make the source/drain terminals and applying an etchant solution containing hydrogen peroxide to carry out etching in an etching process of the source/drain terminals, damages of the oxide semiconductor layer caused by traditional etchant solution can be prevented and quality of the thin-film transistor substrate can be enhanced. Further, it is not necessary to additionally form an etch stopper layer to protect the oxide semiconductor layer in the back channel so as to achieve relatively high channel width/length ratio (W/L), and also simplify the structure of the thin-film transistor substrate, simplify the manufacturing process, reduce the manufacturing cost, and enhance yield rate.

Method for manufacturing thin-film transistor substrate

The present invention relates to a thin-film transistor (TFT) active device. The TFT active device includes: a gate electrode; a gate insulation layer covering the gate electrode; an oxide semiconductor layer formed on the gate insulation layer; a first protection layer formed on the oxide semiconductor layer; a source/drain electrode electrically connected with the oxide semiconductor layer; and a second protection layer covering the source/drain electrode. At least one of the gate insulation layer, the first protection layer, and the second protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0. The TFT active device according to the present invention helps suppressing diffusion of metal ions from a metal electrode and reducing hydrogen content of the GI layer, the ES layer, or the PV layer so as to effectively improve the stability of the manufacture operation of TFT.

Thin-film transistor active device

The present invention provides a method for manufacturing thin-film transistor active device and a thin-film transistor active device manufactured with the method. The method includes providing a substrate; forming a gate terminal on the substrate through sputtering and masking operations; forming a gate insulation layer on the gate terminal through CVD; forming an oxide semiconductor layer on the gate insulation layer through sputtering and masking operations; forming a first protection layer on the oxide semiconductor layer through CVD, forming a metal layer on the first protection layer through sputtering, and forming a data line electrode through masking operation; forming a second protection layer on the first protection layer and the data line electrode through CVD and forming first, second, and third bridging holes through masking operation; forming a transparent conductive layer on the second protection layer through sputtering and patternizing the transparent conductive layer through masking operation.

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Shenzhen, China

Chenglung Chiang