Neophotonics Corporation

Weatherford Canada Ltd.

University of Ottawa

Lxdata Inc.

Weatherford Canada Partnership

Weatherford Engineered Chemistry Canada Ltd

Chengkun Chen

Raghuram Narayan

Milind Gokhale

Marcel G Boudreau

Maxime Poirier

Jacques Albert

Yanina Shevchenko

Alexei Ivanov

Pierre Simon Joseph Berini

Pierre Simon Berini

Marcel Gerard Boudreau

Optical modulators are described having a Mach-Zehnder interferometer and a pair of RF electrodes interfaced with the Mach-Zehnder interferometer in which the Mach-Zehnder interferometer comprises optical waveguides formed from semiconductor material. The optical modulator also comprises a ground plane spaced away in a distinct plane from transmission line electrodes formed from the association of the pair of RF electrodes interfaced with the Mach-Zehnder interferometer. The ground plane can be associated with a submount in which an optical chip comprising the Mach-Zehnder interferometer and the pair of RF electrodes is mounted on the submount with the two semiconductor optical waveguides are oriented toward the submount. Methods for forming the modulators are described.

High frequency optical modulator with laterally displaced conduction plane relative to modulating electrodes

The present invention relates to a sensor using a tilted fiber grating to detect physical manifestations occurring in a medium. Such physical manifestations induce measurable changes in the optical property of the tilted fiber grating. The sensor comprises a sensing surface which is to be exposed to the medium, an optical pathway and a tilted grating in the optical pathway. The grating is responsive to electromagnetic radiation propagating in the optical pathway to generate a response conveying information on the physical manifestation.

Tilted grating sensor

Apparatus and techniques are presented such as can be used for electro-optic modulation and detection or other applications. For example, an optical metal grating is disposed on a thin metal film to couple light from broadside to the metal film as surface plasmon-polariton waves; below the metal film is located a thin insulating layer and a doped semiconductor region forming a metal-insulator-semiconductor structure. The device can be configured to operate as a reflection or transmission modulator, or as a photodetector, for example. Modulating the voltage applied to the metal-insulator-semiconductor structure modulates the carrier concentration in the semiconductor near the insulating layer, which modulates the refractive index of the semiconductor in this region, thus modulating the coupling efficiency to the surface plasmon-polaritons, thus modulating the reflectance and transmittance of the device. Modulated incident light produces a modulated photocurrent under bias which may be detected using electronics.

Metal-insulator-semiconductor devices based on surface plasmon polaritons

Growing community of inventors

Kanata, Canada

Chengkun Chen