Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Chenghao Bu

Huihui Zhao

Hong Fang

Embodiments of the present invention provide a display panel. The display panel includes a flexible substrate, wherein a first opening is provided at a bottom of the flexible substrate; a first inorganic layer; a first thin film transistor and a second thin film transistor, wherein the first thin film transistor includes a silicon semiconductor layer, and the second thin film transistor includes a metal oxide semiconductor layer and a second inorganic layer, wherein the second inorganic layer is provided with a second opening, and the second opening at least partially overlaps the first opening.

Display panel and display device

A display panel and a method of manufacturing the same are provided. The method of manufacturing the display panel includes providing a substrate, and forming other layers on the substrate sequentially. Accordingly, a first via hole, a second via hole, and a third via hole are formed. The first via hole and the second via hole are filled with a flexible material to form a flexible layer and a stress release unit, respectively. Then, a metal layer which fills the third via hole is formed on the interlayer dielectric layer.

Display panel and method of manufacturing the same

A display panel is provided with a deep hole area in a lower frame area of an array substrate, so that the lower frame area is bent back along the deep hole area, thereby achieving a narrow frame of the display panel. Simultaneously a stress relief hole is provided in the display area, which is used to release the stress generated when the display area is bent, so that the entire array substrate is less likely to be cracked or broken when bent, and the bending performance of the display panel is greatly improved.

Display panel including flexible subtrate exhibiting improved bending performance, and manufacturing method thereof

The present disclosure provides a display panel and a display module. The display panel includes a display area; a non-display area surrounding the display area, wherein the non-display area includes a bending area adjacent to the display area and a bonding area away from the display area; and a power line, wherein the power line includes a first type of power line and a second type of power line positioned in the bending area; wherein the first type of power line and the second type of power line are disposed at different layers in the bending area.

Display panel and display module

A bendable display panel and a fabricating method thereof are disclosed, including: providing the flexible substrate and the inorganic film layer formed on the flexible substrate, the inorganic film layer includes a deep hole region disposed in a bending area; dry etching the deep hole region to form a deep hole having a slope, and a bottom of the deep hole is located on the flexible substrate; filling the deep hole with an organic material to form an organic film layer; and forming a metal wiring layer on the inorganic film layer and the organic film layer. In the method, a deep hole having a slope is formed by gas dry etching. The etching method can control the slope to improve the climbing ability of the metal wiring, and reduce or avoid the loss of electrical signal caused by disconnection of the metal wiring, thereby improving the display panel quality.

Bendable display panel and fabricating method thereof

The present invention provides a thin-film transistor and a fabrication method thereof, and an array substrate. The thin-film transistor includes a separation layer () arranged between the source electrode () and the drain electrode (). An oxide semiconductor channel layer () is arranged on one side of the separation layer () and the drain electrode () to contact a portion of an upper surface of the drain electrode (), a side surface of the drain electrode () and the organic separation layer (), and a portion of an upper surface of the source electrode () to serve as a vertical channel, of which a channel length corresponds to a thickness of the separation layer (). Varying the thickness of the separation layer to reduce the length of the vertical channel to a sub-micrometer order would greatly reduce the size of the thin-film transistor and reduce the area of a pixel. The vertical channel does not cause a short channel effect so as to improve electrical performance of the thin-film transistor. Using a multiple-layered hexagonal boron nitride film to make a moisture/oxygen barrier layer () and using a double-layered graphene film to make the source electrode () and the drain electrode () help significantly improve bending durability of the thin-film transistor.

Thin-film transistor fabrication method for reducing size of thin-film transistor and pixel area

Thin-film transistor having oxide semiconductor channel layer vertically exending along lateral sides of source electrode, separation layer, and drain electrode and array substrate including same

This disclosure discloses a manufacturing method of a TFT substrate, a TFT substrate, and an OLED display panel. The manufacturing method of the TFT substrate includes sequentially forming a gate electrode, a gate insulating layer, a polysilicon layer, and a barrier layer on the substrate, the polysilicon layer including a source region, a drain region, and a channel region; the barrier layer above the source and drain regions is etched by a photomask so that the thickness of the barrier layer allows ions to pass through and is not zero; and then the polysilicon layer is ion implanted; through the method, the polysilicon layer of the source and drain regions can be ion implanted without exposing the polysilicon layer, the damage of the polysilicon layer during the process can be avoided, and the stability of the TFT substrate can be improved, thereby improving the display quality.

Growing community of inventors

Wuhan, China

Chenghao Bu