Motorola Corporation

Microelectronics and Computer Technology Corporation

Rockwell Collins, Inc.

Si Diamond Technology, Inc.

Hughes Aircraft Company

Other

Microelectronics and Computer Corporation

Chenggang Xie

Nalin Kumar

Johann T Trujillo

Rodolfo Lucero

Robert T Smith

Anders P Walker

Sung P Pack

Rama Rao Goruganthu

Yi Wei

Joseph W Bostaph

Xunhu Dai

Robert C Rumbaugh

Donald E Patterson

Mohammed K Ghazi

Dean Joseph Eichman

James B West

Robert J Adler

James E Jaskie

Curtis D Moyer

Lawrence N Dworsky

Albert Alec Talin

David W Cripe

Howard K Schmidt

Jerald A Hallmark

Kenneth Andrew Dean

Bernard F Coll

Scott V Johnson

Don L Landt

Ken K Foo

John Song

Theodore Jay Hoffmann

Joyce K Yamamoto

Peter A Smith

Scott L Patten

Donald F Hovda

Gamal M Hegazi

Troy A Trottier

Rob Rumbaugh

Mark K Yu

Carl R Hagen

David M Rice

Jay Vishal Paidipati

Charles H Reichert

A power amplification circuit can include an input impedance matching circuit associated with one or more frequency bands of a plurality of frequency bands. The power amplification circuit can include a transistor with respective input coupled to an output of the input impedance matching circuit. The power amplification circuit can include a plurality of output impedance matching circuits. Each output impedance matching circuit can be associated with a respective frequency band of the plurality of frequency bands. The power amplification circuit can include a single pole multi-throw (SPMT) switch having an input terminal connected to an output of the transistor and a plurality of output terminals. Each output terminal of the SPMT switch can be connected to a corresponding output impedance matching circuit of the plurality of output impedance matching circuits.

Systems and methods for multi-band power amplifiers

Active filters that may be utilized in various types of radio devices (e.g., receivers and/or transmitters) are disclosed. In some implementations, high dynamic range mixers implementing a polyphase multipath approach may be utilized in the active filters. Such mixers may satisfy the high dynamic range and image suppression requirements when they are configured for radio frequency applications.

Radio frequency active filter

An active electronically scanned array (AESA) includes a plurality of power amplifiers including first power amplifiers and second power amplifiers. The first power amplifiers are biased by a first drain voltage. The second power amplifiers are biased by a second drain voltage. The second drain voltage is different from the first drain voltage.

Active electronically scanned array with power amplifier drain bias tapering

A power amplifier including a power amplifier stage. The power amplifier stage may be configured to receive a signal, amplify the signal at saturation with substantially zero amplitude-phase (AM-PM) distortion, and output the amplified signal as an output signal. The power amplifier may be a single stage power amplifier or a multi-stage power amplifier.

Power amplifier

Antenna systems and packaging methods that reduce packaging and circuit board complexities are disclosed. The antenna system includes a circuit board. The circuit board defines a first surface and a second surface opposite to the first surface. The antenna system also includes a plurality of integrated antenna elements positioned on the first surface of the circuit board. Each integrated antenna element of the plurality of integrated antenna elements includes an antenna element, a printed circuit board and a radio frequency integrated circuit chip. Each integrated antenna element of the plurality of integrated antenna elements is packaged as a three-dimensional stack package.

System-on-package integration with antenna elements

Electronically scanned array antenna radiating elements include a phase comparator. The phase comparator connects the transmission circuitry to the receiving circuitry via a shunt switch to compare the intended phase with the actual phase. The phase of a signal received via the shunt switch is sensitive to the performance of power amplifiers in the transmission circuitry, transmitter/receiver switch, and load impedance. Distributed attenuators between the shunt switch and a phase comparator reduce crosstalk. Phase comparison circuitry is useful for detecting faults in the ESA radiating element.

Radio frequency power output control and detection for electronically scanned array system

The present disclosure is directed to combiners/splitters that reduce packaging and circuit board complexities. More specifically, an apparatus including a chain of directional couplers is used to distribute radio frequency power. The apparatus may also include a set of gain controllers. Each particular gain controller of the set of gain controllers is associated with a particular directional coupler of the chain of directional couplers, and each particular gain controller is configured to adjust a radio frequency power for the associated particular directional coupler.

Signal distribution utilizing directional couplers connected in a chain topology

A present novel and non-trivial semiconductor device, switch device and method performed by the switch device is disclosed. A semiconductor device for conducting current may be comprised of an SI substrate and a plurality of electrodes deposited upon the substrate, where at least one electrode may be comprised of a transparent conductive material ('TCM'). A switching device may be comprised of a plurality of electromagnetic radiation sources and a plurality of the semiconductor devices. The method performed by the switching device may be comprised of receiving a plurality of cycles. During a first cycle, a first semiconductor device may be irradiated, and in response, current may flow through the first semiconductor device and provided to a user circuit. During the second cycle, a second semiconductor device may be irradiated, and in response, current from a user circuit may be received and flow through the first semiconductor device.

PCSS-based semiconductor device, switching device, and method

A switch comprises two photoconductive semiconductors and two corresponding laser diodes driven by opposing voltage sources. The two photoconductive semiconductors are connected in series between a high and low voltage source with a radio frequency output at a center node between the photoconductive semiconductors. Each photoconductive semiconductor may include one ohmic contact and one schottky contact for superior bandwidth and efficiency.

Photoconductive semiconductor amplifier and switch

High efficiency transmitters for electronically scanned arrays (also known as electronically steered antennas or ESAs) are disclosed. The transmitters in accordance with the present disclosure utilize outphasing power amplification. In one embodiment, the outphasing transmitter includes a phase shifting device. The phase shifting device is configured for phase shifting an input signal and providing a pair of phase shifted signals for each emitting element of the EAS. The outphasing transmitter also includes an outphasing power amplifier associated with each emitting element. Each outphasing power amplifier is configured for separately amplifying the pair of shifted signals for each emitting element and combining the separately amplified signals for each emitting element for transmission.

High efficiency outphasing transmitter for electronically scanned arrays

A device may include a first antenna and a second antenna. The device may further include a frequency domain multiplexer configured for receiving a first input signal. The frequency domain multiplexer may have a first output port connected to the first antenna and configured for supplying a signal in a low band frequency range of the first input signal to the first antenna, and a second output port connected to the second antenna and configured for supplying a signal in a high band frequency range of the first input signal to the second antenna. The device may also include a third antenna configured for receiving a signal in a mid band frequency range of a second input signal. The low band frequency range may be separated from the high band frequency range.

Minimizing interference between multiple signals over a wide bandwidth

A system for determining an amount of power supplied from a power amplifier may include a power amplification circuit having a characteristic thermal resistance, a first temperature sensor for sensing a first temperature associated with the power amplification circuit when the power amplification circuit is receiving power from the power source, a second temperature sensor for sensing a second temperature associated with an environment occupied by the power amplification circuit, and a processor coupled with the first temperature sensor and the second temperature sensor for determining an amount of power dissipation utilizing (A) a temperature difference determined utilizing the first temperature and the second temperature and (B) the characteristic thermal resistance of the power amplification circuit.

Power detection for high power amplifier applications

The present invention is a high power direct transmitter with frequency-shift keying (FSK) modulation. The transmitter implements a high power, high efficiency power voltage-controlled oscillator (VCO) which allows for production of a modulated RF signal at the final stage (ex.&#x2014;right at the antenna), thereby eliminating all driving stage power amplification and frequency translation. The transmitter further provides a low SWAP-C alternative to currently available solutions.

High power direct transmitter with frequency-shift keying (FSK) modulation

A power amplifier comprises a distributed pre-driver, digital signal adjuster, a distributed high power amplifier; and an integrated coupler-detector unit. The distributed pre-driver, the digital signal adjuster, the distributed high power amplifier and the integrated coupler-detector unit are formed at an interface of a Gallium Nitride layer and an Aluminum Gallium Nitride layer of a monolithic microwave integrated circuit device.

GaN based digital controlled broadband MMIC power amplifier

An exemplary system and method for manufacturing micropump systems having integrated piezoresistive sensors is disclosed as including inter alia: a substrate, an inlet channel, an outlet channel, a pumping cavity, a first valve for permitting fluid flow from the inlet channel to the pumping cavity and restricting backflow of purged fluid from the pumping cavity to the inlet channel; a second valve for permitting fluid flow from the pumping cavity to an outlet channel and restricting backflow of purged fluid from the outlet channel to the pumping cavity; a pump actuator element; a pressure sensing cavity surface capable of at least partial mechanical deformation; a plurality of piezoresistors disposed within the sensing cavity; a plurality of contact pads; a plurality of conductive pathways connecting the piezoresistors and the contact pads; and a substantially monolithic device package, wherein the sensing cavity is substantially contained within the micropump device package. Disclosed features and specifications may be variously controlled, adapted or otherwise optionally modified to improve micropump operation in any microfluidic application. Exemplary embodiments of the present invention representatively provide for piezoresistive pressure sensors that may be readily integrated with existing portable ceramic technologies for the improvement of device package form factors, weights and other manufacturing and/or device performance metrics.

Micropump with integrated pressure sensor

Growing community of inventors

Phoenix, AZ, United States of America

Chenggang Xie