Boe Technology Group Co., Ltd.

Hefei Boe Optoelectronics Technology Co., Ltd.

Beijing Baidu Netcom Science and Technology Co., Ltd.

Chengcheng Wang

Xianxue Duan

Tianzhen Liu

Kui Gong

Xu Liang Li

Cheng Chen

Jiangliang Guo

Minghao Liu

Dezhi Xu

Jiabing Leng

Yawei Wen

Gaofei Shi

Yulin Xu

Ye Su

Hefei Li

Embodiments of the present disclosure relate to a method and apparatus for outputting information. The method can include: acquiring an image of a to-be-inspected object; segmenting the image into at least one subimage; for a subimage in the at least one subimage, inputting the subimage into a pre-trained defect classification model to obtain a defect category corresponding to the subimage; and outputting defect information of the object based on a defect category corresponding to each subimage.

Method and apparatus for outputting information

A display panel, a display device and a manufacture method of a display panel are provided. The display panel includes a base substrate, a plurality of pixel units disposed in an array and a total reflection structure. Each of the plurality of pixel units includes a light emitting region and a light emitting device in the light emitting region; and the total reflection structure is disposed on a light exiting side of the light emitting device and surrounds at least a portion of the light emitting region; the total reflection structure includes a main structure and a second structure covering a side, which faces the light emitting device, of the main structure, and a refractive index of the second structure is greater than a refractive index of the main structure.

Display panel and manufacture method thereof, display device

A thin film transistor, a method for manufacturing the same, an array substrate and a display device are provided. The method for manufacturing a thin film transistor includes: providing a substrate; forming an active layer and a light shielding layer covering the active layer on the substrate by a patterning process, the light shielding layer being formed of a photoresist material; and forming a source-drain electrode layer and a passivation layer covering the source-drain electrode layer.

Thin film transistor, method for manufacturing the same, array substrate and display device

A touch screen, a fabrication method thereof and a display device are provided. The method comprises: forming a touch electrode on a light emission side of a display panel after the display panel is formed; and forming an organic transparent insulation layer on the light emission side of the display panel where the touch electrode has been formed. An absolute value of a difference between a refractive index of the organic transparent insulation layer and a refractive index of the touch electrode is less than or equal to a predetermined value.

Touch screen, fabrication method thereof and display device

The present disclosure provides a poly-silicon TFT, its manufacturing method, an array substrate and its manufacturing method. The method for manufacturing the poly-silicon TFT includes a step of, subsequent to the formation of an amorphous-silicon active layer and a source electrode of the TFT, applying an electrical signal to the source electrode, so as to maintain the source electrode at a predetermined temperature for a predetermined time period, thereby to crystallize the amorphous active layer into a poly-silicon active layer due to heat generated by the source electrode and transferred to the amorphous active layer.

Methods for manufacturing poly-silicon thin film transistor and array substrate

A metal complex having a structural formula as follows, wherein, the metal atom M is selected from the group consisting of iridium (Ir), platinum (Pt), osmium (Os), rhenium (Re), ruthenium (Ru) and copper (Cu); R, R, Rand Rare independently selected from the group consisting of &#x2014;F, &#x2014;CF, &#x2014;CHand substituted phenyl; in the (C^N) substructure located on a left side of the metal atom M in the structural formula (I), C is located in a first aromatic or heteroaromatic ring, and N is located in a second heteroaromatic ring. The metal complex can be used in luminescent material of display devices. 

Metal complex, preparation method and use thereof, and display device

Growing community of inventors

Beijing, China

Chengcheng Wang