Qualcomm Mems Technologies, Inc.

Chengbin Qiu

Chun-Ming Wang

Stephen Zee

Ming-Hau Tung

Teruo Sasagawa

Lior Kogut

Fan Zhong

Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

MEMS devices having support structures with substantially vertical sidewalls and methods for fabricating the same

Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Methods for etching layers within a MEMS device to achieve a tapered edge

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Cupertino, CA, United States of America

Chengbin Qiu