Qualcomm Incorporated

Cheng Zhong

Xiaohua Kong

Nam Dang

Sei Seung Yoon

Dongkyu Park

Mohamed Hassan Abu-Rahma

Nan Chen

Miao Li

Mehdi Hamidi Sani

Anosh Bomi Davierwalla

Chang Ho Jung

Hung Quoc Vuong

Swarna Navubothu

Zhiqin Chen

Tirdad Sowlati

Changho Jung

Hari Rao

Bo Sun

Zhi Zhu

Seung-Chul Song

Vannam Dang

Hari M Rao

Fares K Maarouf

Hung Q Vuong

Nam V Dang

Mohamed Hassan Soliman Abu-Rahma

Jianwen Ye

Swarna L Navubothu

Anosh B Davierwalla

Swarna Latha Navubothu

A low-power clock generation circuit has a phase generator that receives an input clock signal and uses the input clock signal to generate multiple intermediate clock signals with different phase shifts, a phase rotator circuit that outputs phase-adjusted clock signals, a frequency doubler circuit that receives a plurality of the phase-adjusted clock signals and outputs two frequency-doubled clock signals having a 180&#xb0; phase difference, and a quadrature clock generation circuit that receives the two frequency-doubled clock signals and provides four output signals that include in-phase and quadrature versions of the two frequency-doubled clock signals.

Low-power high-speed CMOS clock generation circuit

An electronic device includes a receiver sense circuit configured to generate a detection signal responsive to detecting a connection to a sink device via a connector. The electronic device further includes a controller coupled to a hot plug detect (HPD) interface. The controller is configured to enable a direct current (DC) voltage source based on the detection signal received from the receiver sense circuit.

Power saving during a connection detection

In a particular embodiment, an electronic device includes a direct current (DC) voltage source coupled to a DC interface. The electronic device includes a receiver sense circuit configured to detect a connection of the electronic device to a sink device via a connector without consuming power from the DC voltage source. The electronic device further includes a controller coupled to a hot plug detect (HPD) interface. The controller is configured to receive a detection signal from the receiver sense circuit, selectively control a switch to enable and disable the DC voltage source based on the detection signal, detect an HPD signal at the HPD interface after enabling the DC voltage source, and disable the receiver sense circuit in response to detecting the HPD signal.

A clock generator is provided that is immune to skew between bits in digital words generated by a multi-phase receiver.

Clock pulse generator for multi-phase signaling

System and method for testing a high speed data path without generating a high speed bit clock, includes selecting a first high speed data path from a plurality of data paths for testing. Coherent clock data patterns are driven on one or more of remaining data paths of the plurality of data paths, wherein the coherent clock data patterns are in coherence with a low speed base clock. The first high speed data path is sampled by the coherent clock data patterns to generate a sampled first high speed data path, which is then tested at a speed of the low speed base clock.

High speed data testing without high speed bit clock

A memory device includes a core array that includes memory cells. The memory device also includes a headswitch coupled to the core array and a positive supply voltage. The headswitch reduces leakage current from the core array by disconnecting the core array from the positive supply voltage. Additionally, head switches are added for pre-charge devices to further reduce leakage current.

Leakage reduction in memory devices

A differential voltage mode driver for implementing symmetric single ended termination includes an output driver circuitry having a predefined termination impedance. The differential voltage mode driver also includes an output driver replica having independently controlled first and second portions. The first and second portions are independently controlled to establish a substantially equal on-resistance of the first and the second portions. The output driver replica controls the predefined termination impedance of the output driver circuitry.

Apparatus to implement symmetric single-ended termination in differential voltage-mode drivers

Power saving for hot plug detect (HPD) is disclosed. In a particular embodiment, a method includes detecting, at a source device that is connectable to a sink device, a connection of the source device to the sink device via a connector. The source device includes a DC voltage source and the connection is detected without consuming power from the DC voltage source.

A circuit includes a controllable oscillator and a controller coupled to the controllable oscillator. The controller is configured to provide a current control and a gain control to the controllable oscillator. The gain control is configured to change a gain of the controllable oscillator during a calibration process.

System and method of controlling gain of an oscillator

A method includes tracking a tuning voltage at a first circuit coupled to a first drain node of a first supply of a charge pump. The method also includes tracking the tuning voltage at a second circuit coupled to a second drain node of a second supply of the charge pump. The method further includes stabilizing a first voltage of the first drain node and a second voltage of the second drain node responsive to the tuning voltage.

System and method of stabilizing charge pump node voltage levels

A circuit includes a first path including a first transistor and a first current source. The first transistor is responsive to a tuning voltage. The circuit also includes a tuning voltage range extension circuit responsive to the tuning voltage. The tuning voltage range extension circuit is configured to selectively change current supplied by the first path as the tuning voltage exceeds a capacity threshold of the first transistor.

Tuning voltage range extension circuit and method

A pseudo-dual port memory address multiplexing system includes a control circuit operative to identify a read request and a write request to be accomplished during a single clock cycle. A self time tracking circuit monitors a read operation and generates a switching signal when the read operation is determined to be complete. A multiplexer is responsive to the switching signal for selectively providing a read address and a write address to a memory address unit at the proper time.

Address multiplexing in pseudo-dual port memory

In a particular embodiment, a memory device is disclosed that includes a memory cell including a resistance-based memory element coupled to an access transistor. The access transistor has a first oxide thickness to enable operation of the memory cell at an operating voltage. The memory device also includes a first amplifier configured to couple the memory cell to a supply voltage that is greater than a voltage limit to generate a data signal based on a current through the memory cell. The first amplifier includes a clamp transistor that has a second oxide thickness that is greater than the first oxide thickness. The clamp transistor is configured to prevent the operating voltage at the memory cell from exceeding the voltage limit.

Memory device for resistance-based memory applications

A system and method to read and write data in magnetic random access memories are disclosed. In a particular embodiment, a device includes a spin transfer torque magnetic tunnel junction (STT-MTJ) element and a transistor with a first gate and a second gate coupled to the STT-MTJ element.

Growing community of inventors

San Diego, CA, United States of America

Cheng Zhong