Silicon Motion, Inc.

Advanced Semiconductor Engineering, Inc.

Cheng-Yu Tsai

Ian Hu

Chia-Chi Liang

Jin-Feng Yang

Hung-Hsien Huang

Kuo-Han Yuan

The invention introduces a method for configuring a current block to program data, performed by a processing unit, which includes: dividing storage space of a flash module into a static area and a dynamic area; entering a first mode to obtain a first empty SB from the dynamic area and erase the first empty SB to configure the first empty SB as a non-SLC block; and entering a second mode from the first mode to obtain a second empty SB from the static area and erase the second empty SB to configure the second empty SB as an SLC block in response that a background garbage collection (GC) flag indicates that a background GC process has been performed, at least one empty SB is presented in the static area, and a quantity of empty SBs in the dynamic area equals or is less than a predefined quantity.

Method and non-transitory computer-readable storage medium and apparatus for configuring current block to program data

The invention introduces a method for garbage collection (GC) in a flash memory device, performed by a processing unit, includes: finding a source block (SBLK) associated with a hit accumulated valid page count (VPC) that is the first one exceeding a total number of physical pages in one destination block (DBLK); labeling the found SBLK and its subsequent SBLKs as first-type SBLKs; labeling the other SBLKs as second-type SBLKs; obtaining Host-address To Flash-address mapping (H2F) sub-tables corresponding to valid pages stored in the second-type SBLKs; in the scanning for each H2F sub-table, detecting valid pages stored in the first-type and the second-type SBLKs, and appending records into a GC table for the valid pages; and reprogramming user data of a designated physical page in a designated first-type or second-type SBLK into a designated physical page in the DBLK according to each record in the GC table.

Method and non-transitory computer-readable storage medium and apparatus for garbage collection with determined host-address to flash-address mapping (H2F) sub-tables in flash memory device

A method for performing garbage collection (GC) management of a memory device with aid of block classification and associated apparatus are provided. The method may include: utilizing a memory controller to divide at least one portion of blocks among a plurality of blocks into multiple first blocks belonging to at least one first type in a first area and multiple second blocks belonging to at least one second type in a second area; utilizing the memory controller to receive a first command from a host device through a transmission interface circuit within the memory controller; and during writing data in response to the first command, performing a foreground GC procedure to control the memory device to perform GC before completing at least one writing operation corresponding to the first command, for controlling priority of releasing storage space of the second area to be higher than that of the first area.

Method for performing garbage collection management of memory device with aid of block classification, memory controller, memory device and electronic device

The present invention provides a control method of a flash memory controller, which includes the steps of: setting a waiting time in an interrupt coalescing mechanism, and setting a timer, wherein a timeout value of the timer is equal to the waiting time; receiving multiple commands from a submission queue in a host device, generating multiple command responses after processing the multiple commands, and writing the multiple command responses to a completion queue in the host device; receiving a submission queue tail and a completion queue head from the host device; and when the timer reaches the timeout value, subtracting the completion queue head from the submission queue tail to obtain a queue depth of a command queue of the host device.

Flash memory controller and associated control method

A semiconductor package structure includes a semiconductor die, at least one wiring structure, a metal support, a passive element, a plurality of signal vias, and a plurality of thermal structures. The semiconductor die has an active surface. The at least one wiring structure is electrically connected to the active surface of the semiconductor die. The metal support is used for supporting the semiconductor die. The passive element is electrically connected to the semiconductor die. The signal vias are electrically connecting the passive element and the semiconductor die. The thermal structures are connected to the passive element, and the thermal structures are disposed on a periphery of the at least one wiring structure.

Semiconductor package structure and semiconductor manufacturing process

A method of managing a garbage collection (GC) operation on a flash memory includes: dividing a GC operation into a plurality of partial GC operations; determining a default partial GC operation time period for each partial GC operation; determining a partial GC intensity according to at least a basic adjustment factor and an amplification factor; determining the basic adjustment factor according to a type of one or more source blocks corresponding to the GC operation; determining the amplification factor according to a percentage of invalid pages in the one or more source blocks corresponding to the GC operation; and performing the plurality of partial GC operations according to the partial GC intensity and the default partial GC operation time period.

Method of managing garbage collection operation in flash memory based on types of source blocks and related memory controller and storage system

A substrate structure, a method for manufacturing the same and a semiconductor device structure including the same are provided. The substrate structure includes a heat pipe, a first conductive layer and an insulation layer. The heat pipe has an upper surface and a lower surface. The heat pipe includes an opening extending from the upper surface to the lower surface. The first conductive layer is disposed on the upper surface and includes a via structure passing through the opening. The insulation layer is disposed between the heat pipe and the conductive layer.

Growing community of inventors

Kaohsiung, Taiwan

Cheng-Yu Tsai