Lucent Technologies Inc.

Cheng-Yu Tai

Michael Geva

Bryan Phillip Segner

Joseph Brian Seiler

Erin Kathleen Byrne

A method for altering a dopant front profile of a dopant in a wafer is disclosed. An initial wafer is provided with an upper doped layer and a lower undoped layer. An oxide layer is grown over a portion of the wafer while a second portion of the wafer remains oxide-free. The wafer is then exposed to a substantially non-growth enhancement diffusion environment that contains the dopant at a given flow rate, but lacks additional materials which would cause growth on the exposed portions of wafer. After a predetermined amount of diffusion is allowed to occur, the wafer is removed from the diffusion environment and the oxide layer is removed.

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Upper Macungie Township, PA, United States of America

Cheng-Yu Tai