United Microelectronics Corp.

Cheng-Yu Ma

Wen-Han Hung

Tzyy-Ming Cheng

Ta-Kang Lo

Tsai-Fu Chen

Chien-Ting Lin

Chun-Hsien Lin

Jiunn-Hsiung Liao

Chien-Ming Lai

Che-Hua Hsu

Zhi-Cheng Lee

Yi-Wen Chen

Cheng-Guo Chen

Po-Jui Liao

Jie-Ning Yang

Shao-Hua Hsu

Tong-Jyun Huang

Ying-Tsung Chen

Guang-Yaw Hwang

Tsung-Lung Tsai

Hung-Ling Shih

Jung-Tsung Tseng

A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An Oambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.

Oxygen treatment of replacement work-function metals in CMOS transistor gates

A method for fabricating a metal gate includes the following steps. First, a substrate having an interfacial dielectric layer above the substrate is provided. Then, a gate trench having a barrier layer is formed in the interfacial dielectric layer. A source layer is disposed above the barrier layer. Next, a process is performed to have at least one element in the source layer move into the barrier layer. Finally, the source layer is removed and a metal layer fills up the gate trench.

Structure of metal gate and fabrication method thereof

A method for fabricating metal gate transistor is disclosed. The method includes the steps of: providing a substrate, wherein the substrate comprises a transistor region defined thereon; forming a gate insulating layer on the substrate; forming a stacked film on the gate insulating layer, wherein the stacked film comprises at least one etching stop layer, a polysilicon layer, and a hard mask; patterning the gate insulating layer and the stacked film for forming a dummy gate on the substrate; forming a dielectric layer on the dummy gate; performing a planarizing process for partially removing the dielectric layer until reaching the top of the dummy gate; removing the polysilicon layer of the dummy gate; removing the etching stop layer of the dummy gate for forming an opening; and forming a conductive layer in the opening for forming a gate.

Metal gate transistor and method for fabricating the same

A method for forming a transistor having a metal gate is provided. A substrate is provided first. A transistor is formed on the substrate. The transistor includes a high-k gate dielectric layer, an oxygen containing dielectric layer disposed on the high-k gate dielectric layer, and a dummy gate disposed on the oxygen containing dielectric layer. Then, the dummy gate and the patterned gate dielectric layer are removed. Lastly, a metal gate is formed and the metal gate directly contacts the high-k gate oxide.

Method of making transistor having metal gate

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Tainan, Taiwan

Cheng-Yu Ma