Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng-yu Hsieh

Shih-Chang Liu

Lee-Chuan Tseng

Shih-Wei Lin

Chun-wen Cheng

Yi-chuan Teng

The present disclosure provides a semiconductor structure and a method for fabricating semiconductor structure. The semiconductor structure includes a first device, configured to be a complementary metal oxide semiconductor device, wherein the first device includes a substrate, a multi-layer structure disposed on the substrate, a first hole, defined between a first end with a first circumference and a second end with a second circumference, a second hole, aligned to the first hole and defined between the second end and a third end with a third circumference, wherein the third circumference is larger than the first circumference and the second circumference, and a second device, configured to be a micro-electro mechanical system device and bonded to the first device, wherein a first chamber is between the first device and the second device, and the first end links with the first chamber, and a sealing object configured to seal the second hole.

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HSINCHU, Taiwan

Cheng-yu Hsieh