United Microelectronics Corp.

Mstar Semiconductor, Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng-Yu Hsieh

Chih-Hao Chang

Yu-Hsiang Tseng

Chun-Wen Cheng

Shang-Ying Tsai

Kuei-Sung Chang

Lee-Chuan Tseng

Shih-Wei Lin

Yi-Chuan Teng

Yen-Cheng Liu

Shih-Chang Liu

Wei-Hsiang Hong

Chien-En Hsu

Guo-Zhong Xing

Huan-Chun Tseng

A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

Semiconductive structure and manufacturing method thereof

A semiconductor structure includes: a first device; a second device contacted with the first device, wherein a chamber is formed between the first device and the second device; a first hole disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference; a second hole disposed in the second device and aligned to the first hole; and a sealing object for sealing the second hole. The first end links with the chamber, and the first circumference is different from the second circumference, the second hole is defined between the second end and a third end with a third circumference, and the second circumference and the third circumference are smaller than the first circumference.

Semiconductor structure and method for fabricating the same

An image sensor that includes a substrate is provided. A photodiode is formed in the substrate and in a pixel region. Storage devices are formed in the substrate and adjacent to the photodiode. Deep trench isolation walls penetrate the substrate to isolate the photodiode from the storage devices. A circuit layer is disposed on a first surface of the substrate and connected to the photodiode and the storage devices. A shielding structure is disposed on a second surface of the substrate to shield of the storage devices. A material layer is disposed above the second surface of the substrate. A lens is disposed on the material layer and configured to receive incident light and transmit the incident light to the photodiode.

Image sensor and method for manufacturing the same

A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.

Photodetector and method for fabricating the same

An image sensor includes a first photodiode formed in a first substrate. A first deep-trench isolation (DTI) structure is in the first substrate and surrounds the first photodiode. A first inter-dielectric layer having a first circuit structure is formed on the first substrate. A bonding layer is between the first inter-dielectric layer and a second inter-dielectric layer. The second-inter dielectric layer having a second circuit structure is on the bonding layer. A connection wall is disposed in the first inter-dielectric layer, the bonding layer, and the second inter-dielectric layer to physically connect the first circuit structure and the second circuit structure. A second substrate is disposed on the second inter-dielectric layer. A second photodiode is formed in the second substrate. A second DTI structure is in the second substrate and surrounds the second photodiode.

Image sensor

A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and the second substrate and the first cavity has a first cavity pressure, a second cavity between and sealed by the first substrate and the second substrate and the second cavity has a second cavity pressure, a first surface of the interconnection layer is a sidewall of the first cavity, wherein the first cavity pressure is less than the second cavity pressure.

An image processing method is provided. The method is for calculating a first weighted sum of absolute difference (WSAD) of a first search window and a corresponding first target window, and a second WSAD of a second search window and a corresponding second target window. The first and second search windows have a common matching window, and the first and second target windows have a common target block. The method includes: a) calculating a plurality of absolute differences of the common matching window and the common target block; b) determining a first weight coefficient group and a second weight coefficient group; and c) summing up products of multiplying the absolute differences by the first weight coefficient group to generate the first WSAD, and summing up products of multiplying the absolute differences by the second weight coefficient group to generate the second WSAD.

Image processing circuit and method thereof

A method for manufacturing a BSI image sensor includes following steps: A substrate is provided. The substrate includes a front side and a back side opposite to the front side. The substrate further includes a plurality of isolation structures and a plurality of sensing elements formed therein. Next, the isolation structures are exposed from the back side of the substrate. Subsequently, a thermal treatment is performed to the back side of the substrate to form a plurality of cambered surfaces on the back side of the substrate. The cambered surfaces are formed correspondingly to the sensing elements, respectively.

Backside illumination (BSI) image sensor and manufacturing method thereof

A semiconductor structure includes a first device, a second device, a first hole, a second hole, and a sealing object. The second device is contacted to the first device, wherein a chamber is formed between the first device and the second device. The first hole is disposed in the second device and defined between a first end with a first circumference and a second end with a second circumference. The second hole is disposed in the second device and aligned to the first hole. The sealing object seals the second hole. The first end links with the chamber, and the first circumference is different from the second circumference.

Semiconductor device and method for fabricating the same

A data access method is provided. The data access method is applied for a data device access device to access data from N layers to display an image, where N is a positive integer. Each of the N layers includes a horizontal start point, a horizontal end point, a vertical start point and a vertical end point. The data access method includes: dividing the image into a plurality of regions according to the horizontal start points, the horizontal end points, the vertical start points and the vertical end points, wherein the regions respectively correspond to the N layers; and accessing data from the respective layers corresponding to the regions when displaying the image.

Layer access method, data access device and layer access arrangement method

A back side illumination image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of sensing elements formed in the substrate, a plurality of isolation structures isolating each element, and a plurality of cambered surfaces formed on the back side of the substrate. The cambered surfaces are formed correspondingly to the sensing elements, respectively.

An image access method applicable to an image access device is provided. The method includes: providing a plurality of codes that respectively represent a plurality of image sources; determining a plurality of sets of access settings according to a pixel format arrangement, each set of access setting corresponding to a code arrangement combination composed of the codes; and sequentially accessing data of the image sources by the image access apparatus according to the code arrangement combinations corresponding to the access settings.

Image access method and image access apparatus

A decompression circuit for decompressing data includes a first decompression unit and a second decompression unit. The data sequentially includes a compressed first string, a compressed distance-length pair and a compressed second string. The first decompression unit performs a first decompression on the data to obtain a first string, a distance-length pair and a second string. The second decompression unit receives and decompresses the first string, the distance-length pair and the second string. The first decompression unit does not involve data associated with the distance-length pair when decompression the second string.

Decompression circuit and associated compression method and decompression method

A decompression circuit includes a first decompression unit and a second decompression unit. The first decompression unit performs a first decompression operation on data to generate first decompressed data. The first decompressed data includes a plurality of literals and a distance-length pair. The second decompression unit receives the first decompressed data, and sequentially performs a second decompression operation on the literals and the distance-length pair to generate second decompressed data. After the second decompression unit receives the distance-length pair from the first decompression unit and before the second decompression unit completes decompressing the distance-length pair, the second decompression unit transmits data required for the subsequent first decompression operation performed by the first decompression unit to the first decompression unit according to the distance-length pair.

Decompression circuit and associated decompression method

An image processing system includes a difference detecting module for determining whether second image data is identical to first image data to generate a determination result, and an image processing module for processing the first image data to generate a first image processed result and selectively processing the second image data. The image processing module includes a data path and a control path. According to a reference clock signal, the first and second image data are transmitted via the data path, and the determination result is transmitted via the control path. When the determination result is affirmative, the reference clock signal provided to the data path is gated, so that, without processing the second image data, the image processing module outputs the first image processed result as a second image output corresponding to the second image data.

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Hsinchu County, Taiwan

Cheng-Yu Hsieh