National Central University

Delta Electronics, Inc.

Cheng-Yi Liu

Shen-Jie Wang

Shih-Peng Chen

Huang-Kun Chen

Horng-Jou Wang

Chii-Chang Chen

Ching-Liang Lin

Chia-Hua Chan

Cheng-Heng Kao

Yuan-Tai Lai

Chih-Yi Hsieh

Yen-Shou Liu

Ming-Chung Kuo

The present invention relates to an LED structure having a progressive work function layer, which adopts a conversion layer with a gradually varying work function as the medium for forming an Ohmic contact between the p-type GaN and the metal reflection layer. The work function of the conversion layer is not a single value. Instead, different quantities of dopants are doped at different depths of the conversion layer. Thereby, the conversion layer can match excellently the connected p-type GaN and the metal reflection layer. By taking advantage of the high light transmissivity of the material of the conversion layer, the possibility that light is absorbed by the Ohmic contact layer is reduced. The conversion according to the present invention can also block diffusion of the metal in the metal reflection to the p-type GaN. Accordingly, it can be used as both an Ohmic contact layer and a barrier layer.

Light-emitting diode structure having progressive work function layer

A Sn&#x2014;Ag bonding and a method thereof are revealed. By means of a bonding layer formed by tin and silver between wafers, the stress released by diffusion and bonding between tin(Sn) and silver(Ag) is larger than the stress released by diffusion and bonding of conventional gold-silver bonding. Moreover, a Sn&#x2014;Ag bonding method of the present invention forms Sn&#x2014;Ag bonding at low temperature and releases more stress so as to reduce thermal stress generated during wafer bonding effectively. And after wafer bonding, the high temperature processes can be performed.

Tin-silver bonding and method thereof

A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.

Light-emitting diode apparatus and manufacturing method thereof

A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. The semiconductor layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer. The first type doped semiconductor layer is disposed on the epitaxy substrate, while the light-emitting layer is disposed between the first type and second type doped semiconductor layers. The first bonding pad is disposed in the through hole and electrically connected to the first type doped semiconductor layer, while the second bonding pad is disposed on the second type doped semiconductor layer.

Light emitting diode structure

A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a transferring substrate with the bonding layer; removing the epitaxy substrate; removing a part of the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer for exposing a part of the bonding layer; patterning the bonding layer to form a first and a second bonding portion isolated from each other, wherein the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer are disposed on the first bonding portion; forming a pad on the first type doped semiconductor layer; and forming a conducting wire for electrically connecting the pad and the second bonding portion.

Light emitting diode and fabricating method thereof

In a process of fabricating flip chip interconnection, a UBM layer is deposited on an I/O pad of a chip. The UBM layer includes a nickel layer. On the UBM layer is formed a tin-containing solder material. The chip is mounted on a carrier substrate by alignment of the bonding pad with a contact pad of the carrier substrate. A reflow process is performed to respectively turn the tin-containing solder material to a tin-containing solder bump and form a composite intermetallic compound on the nickel layer of the UBM to prevent its spalling.

Growing community of inventors

Taoyuan, Taiwan

Cheng-Yi Liu