Taiwan Semiconductor Manufacturing Comp. Ltd.

Nanning Fulian Fugui Precision Industrial Co., Ltd.

Nanning Fugui Precision Industrial Co., Ltd.

Hon Hai Precision Industry Co., Ltd.

Cheng-Yen Tsai

Da-Yuan Lee

Ching-Hwanq Su

Wei-Chin Lee

Weng Chang

Cheng-Lung Hung

Chung-Chiang Wu

Hsin-Yi Lee

Zoe Chen

Ming-Hsing Tsai

Chia-Ching Lee

Hsueh Wen Tsau

Ming-Chi Huang

Hung-Chin Chung

Kuan-Ting Liu

Yin-Chuan Chuang

Tai-Wei Hwang

Shih-Hang Chiu

Yi-Hung Lin

Chun-Yuan Chou

Hsueh-Wen Tsau

Ying-Chieh Hung

JoJo Lee

Chih-Yuan Huang

Chien-Pan Lai

Yu-Chung Lin

Yen-Chen Lu

Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Pre-deposition treatment for FET technology and devices formed thereby

An indoor positioning method based on image visual features is disclosed. A Wi-Fi signal strength value of a Wi-Fi tag is matched with a signal strength list to obtain a first location of a first Wi-Fi tag with the greatest matching degree. A SURF descriptor of an image of the Wi-Fi tag is matched with SURF descriptors recorded in the signal strength list to discover an image of a Wi-Fi tag with the greatest matching degree, thereby obtaining a second location of a second Wi-Fi tag corresponding to the image of the Wi-Fi tag with the greatest matching degree. A three location of a three Wi-Fi tag is obtained according to a homography matrix corresponding to the image of the Wi-Fi tag with the largest matching degree. Positioning information of the mobile device is obtained according to the first location, the second location and the third location.

Indoor positioning method based on image visual features and electronic device

Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Geometry for threshold voltage tuning on semiconductor device

In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer on the gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming a gate electrode layer on the capping layer.

Semiconductor devices having dipole-inducing elements

An indoor positioning method based on image visual features. A Wi-Fi signal strength value of a Wi-Fi tag closest to a current location of a mobile device is matched with a signal strength list in a map database to obtain a first location of a first Wi-Fi tag with the greatest matching degree. A SURF descriptor of an image of the Wi-Fi tag closest to the current location of the mobile device is matched with SURF descriptors recorded in the signal strength list in the map database to discover an image of a Wi-Fi tag with the greatest matching degree, thereby obtaining a second location of a second Wi-Fi tag corresponding to the image of the Wi-Fi tag with the greatest matching degree. A three location of a three Wi-Fi tag is obtained according to a homography matrix corresponding to the image of the Wi-Fi tag with the largest matching degree and an empirical value of a positioning error. Positioning information of the mobile device is obtained according to the first location, the second location and the third location.

A method for preventing denial of service attacks which are distributed attacks is applied in a target service provider server, a platform server, and a botnet service provider server. The target service provider server determines a first SDN controller according to an attack protection request, and issues a first flow rule. The target service provider server directs data flow of a network equipment to a first cleaning center and controls the first cleaning center to identify the attacking or malicious element in the data flow according to the first flow rule. The platform server receives the attacking element in the data flow sent by the target service provider server, and regards the same as malicious traffic. The platform server generates an attack report, and sends the attack report to the botnet service provider server to notify the botnet service provider server to clean or filter out the malicious traffic.

Method for preventing distributed denial of service attack and related equipment

Semiconductor device and method

Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (&#x2014;OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the &#x2014;OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Generally, the present disclosure provides example embodiments relating to tuning threshold voltages in transistor devices and the transistor devices formed thereby. Various examples implementing various mechanisms for tuning threshold voltages are described. In an example method, a gate dielectric layer is deposited over an active area in a device region of a substrate. A dipole layer is deposited over the gate dielectric layer in the device region. A dipole dopant species is diffused from the dipole layer into the gate dielectric layer in the device region.

Methods for threshold voltage tuning and structure formed thereby

A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.

Atomic layer deposition methods and structures thereof

A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.

Growing community of inventors

Taipei, Taiwan

Cheng-Yen Tsai