United Microelectronics Corp.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng-Yeh Huang

Yao-Jhan Wang

Chun-Jen Huang

Te-Chang Hsu

Che-Hsien Lin

Chih-Ming Lee

Chi-Yen Lin

Chin-Nan Chang

Gulbagh Singh

Yu-Chih Su

A method for forming a semiconductor device structure is provided. The method includes forming a semiconductor strip structure over a semiconductor substrate. The semiconductor strip structure has a first doped region and a spacing region connected to the first doped region, and the spacing region is an undoped region. The method includes performing an implantation process over the first doped region and the spacing region to convert a first upper portion of the first doped region and a second upper portion of the spacing region into a continuous disorder region. The method includes forming a metal-semiconductor compound layer over the semiconductor strip structure to continuously cover the first doped region and the spacing region after the implantation process.

Method for forming semiconductor device structure with metal-semiconductor compound layer

A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate. The method includes forming an isolation structure in the semiconductor substrate. The isolation structure surrounds a first active region of the semiconductor substrate. The method includes forming a semiconductor strip structure over the semiconductor substrate. The semiconductor strip structure extends across the first active region and extends over the isolation structure, the semiconductor strip structure has a first doped region and a spacing region connected to the first doped region, the first doped region extends across the first active region, the spacing region is over the isolation structure, and the spacing region is an undoped region. The method includes performing an implantation process over the spacing region. The method includes forming a metal silicide layer over the semiconductor strip structure to continuously cover the first doped region and the spacing region.

Method for forming semiconductor device structure with metal silicide layer

A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate with gate structures formed thereon is provided. A source/drain region is formed in the semiconductor substrate and formed between the gate structures. A dielectric layer is formed on the source/drain region and located between the gate structures. An opening penetrating the dielectric layer on the source/drain region is formed. A lower portion of a first conductive structure is formed in the opening. A dielectric spacer is formed on the lower portion and on an inner wall of the opening. An upper portion of the first conductive structure is formed in the opening and on the lower portion. The dielectric spacer surrounds the upper portion of the first conductive structure. The first conductive structure is formed by two steps for forming the dielectric spacer surrounding the upper portion and improving the electrical performance of the semiconductor device.

Manufacturing method of semiconductor device including conductive structure

A semiconductor structure includes a semiconductor substrate, at least a silicon germanium (SiGe) epitaxial region disposed in the semiconductor substrate, and a contact structure disposed on the SiGe epitaxial region. The contact structure includes a titanium nitride (TiN) barrier layer and a metal layer surrounded by the TiN barrier layer. A crystalline titanium germanosilicide stressor layer is disposed in the SiGe epitaxial region and between the TiN barrier layer and the SiGe epitaxial region.

Fin field effect transistor having crystalline titanium germanosilicide stressor layer

A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate. The method includes forming an isolation structure in the semiconductor substrate. The isolation structure surrounds a first active region and a second active region of the semiconductor substrate. The method includes forming a semiconductor strip structure over the semiconductor substrate. The semiconductor strip structure extends across the first active region, the second active region, and the isolation structure between the first active region and the second active region, the semiconductor strip structure has a P-type doped region, an N-type doped region, and a spacing region. The method includes performing an implantation process over the spacing region. The method includes forming a metal silicide layer over the semiconductor strip structure to cover the P-type doped region, the N-type doped region, and the spacing region.

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Tainan, Taiwan

Cheng-Yeh Huang