Inotera Memories, Inc.

Cheng-Yeh Hsu

Chung-Lin Huang

Shin-Bin Huang

Chih-Hao Cheng

Wen-Hsiang Chen

Hsin-Pin Huang

A split contact structure includes a semiconductor substrate having a major surface; a first upwardly protruding structure disposed on the major surface; a first cell contact region in the major surface and being close to the first upwardly protruding structure; a second upwardly protruding structure disposed on the major surface; a second cell contact region in the major surface and being close to the second upwardly protruding structure; a first patterned layer stacked on the first upwardly protruding structure; a second patterned layer stacked on the first upwardly protruding structure; a first contact structure disposed on a sidewall of the first upwardly protruding structure and being in direct contact with the first cell contact region; and a second contact structure disposed on a sidewall of the second upwardly protruding structure and being in direct contact with the second cell contact region.

Split contact structure and fabrication method thereof

A manufacturing method of a capacitor structure is provided, which includes the steps of: on a substrate having a first oxide layer, (a) forming a first suspension layer on the first oxide layer; (b) forming a first shallow trench into the first oxide layer above the substrate; (c) forming a second oxide layer filling the first shallow trench; (d) forming a second suspension layer on the second oxide layer; (e) forming a second shallow trench through the second suspension layer into the second oxide layer above the first suspension layer; (f) forming at least one deep trench on the bottom surface of the second shallow trench through the second and the first oxide layers, (g) forming an electrode layer on the inner surface of the deep trench; and (h) removing the first and second oxide layers through the trench openings in the first and the second suspension layers.

Manufacturing method for high capacitance capacitor structure

A method for fabricating a semiconductor device is provided. A first active region and a second active region are defined in a substrate. An electrode covering the first active region and the second active region is formed on the substrate. A first sacrificial layer is formed on the second active layer. A first work function electrode is formed on the first active layer by performing a first doping process to a portion of the electrode. The first sacrificial layer is removed. A second sacrificial layer is formed on the first active layer.

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Taipei, Taiwan

Cheng-Yeh Hsu