United Microelectronics Corp.

Cheng-Yang Tsai

Wei-Jen Wang

Chien-Fu Chen

Chen-Hsien Hsu

Zhi-Hong Huang

Cheng-Tsung Ku

Chin-Sheng Yang

Kun-Yuan Wu

Ruei-Yau Chen

Yu-Lin Chen

Chao-Wei Lin

Yuan-Hui Chen

A delay cell includes a cascode transistor and an inverter. The cascode transistor is used to receive a control voltage to generate a bias current, and includes a source terminal, a drain terminal, and a gate terminal receiving the control voltage. The inverter is coupled to the cascode transistor and used to generate an output signal according to the bias current in response to an input signal.

Analog delay cell having continuous adjustable delay time

The invention provides a testkey detection circuit, including a plurality of oscillators and a driving circuit. Each of the oscillators has an enable terminal, a voltage terminal and an output terminal, wherein the enable terminals are connected to a common enable terminal. The driving circuit receives the output terminals of the oscillators and increases a driving level of a selected one of the output terminals as a frequency output.

Testkey detection circuit

A speed-up charge pump includes a first charge pump for receiving an up signal and a down signal in digital form to produce a first voltage control signal at an output node. Further, at least one speed-up phase detector includes a first circuit path to receive the up signal and delay the up signal by a predetermined delay as a delay up signal and operate the up signal and the delay up signal by AND logic into an auxiliary up signal; and a second circuit path to receive the down signal and delay the down signal by the predetermined delay as a delay down signal and operate the down signal and the delay down signal by AND logic into an auxiliary down signal. A second charge pump is respectively receiving the auxiliary up and down signals to produce a second voltage control signal also at the output node.

Speed-up charge pump and phase-locked loop and method for operating the same

The present invention provides an integrated circuit with a standard cell of an inverter standard cell. The integrated circuit includes: a first metal line and a second metal line stretching along a first direction; a first dummy gate and a second dummy gate stretching along a second direction; Plural fin structures stretching along the first direction; A gate structure disposed on the fin structures and stretching along the second direction; Two long contact plugs disposed at one side of the gate structure; two short contact plugs disposed at the other side of the gate structure; a gate contact plug disposed on the gate structure; Plural via plugs disposed on the long contact plugs, the short contact plugs and the gate contact plugs; A metal layer includes the first metal line, the second metal line, a third metal line and a fourth metal line.

Integrated circuits with standard cell

The present invention provides an integrated circuit with a standard cell of an inverter. The integrated circuit includes: a first metal line and a second metal line stretching along a first direction; a first dummy gate and a second dummy gate stretching along a second direction; Plural fin structures stretching along the first direction; A gate structure disposed on the fin structures and stretching along the second direction; Two long contact plugs disposed at one side of the gate structure; two short contact plugs disposed at the other side of the gate structure; a gate contact plug disposed on the gate structure; Plural via plugs disposed on the long contact plugs, the short contact plugs and the gate contact plugs; A metal layer includes the first metal line, the second metal line, a third metal line and a fourth metal line.

The present invention provides an integrated circuit with a dummy standard cell. The integrated circuit includes: a first metal line and a second metal line stretching along a first direction; a first dummy gate and a second dummy gate stretching along a second direction; Plural fin structures stretching along the first direction; A gate structure disposed on the fin structures and stretching along the second direction; Plural sets of short contact plug and long contact plug disposed between the first dummy gate, the second dummy gate and the gate structures; a doping region overlaps with the long contact plugs; a gate contact plug disposed on the gate structures; plural contact plugs disposed on and electrical contact the long contact plugs; A metal layer includes the first metal line, the second metal line.

Growing community of inventors

Kaohsiung, Taiwan

Cheng-Yang Tsai