Globalfoundries Inc.

Cheng Xu

Haigou Huang

Guoxiang Ning

Ravi Prakash Srivastava

Zhiguo Sun

Yuping Ren

Qiang Fang

A method of fabricating interconnects in a semiconductor device is provided, which includes forming an interconnect layer having a conductive line and depositing a first aluminum-containing layer over the interconnect layer. A dielectric layer is deposited over the first aluminum-containing layer, followed by a second aluminum-containing layer deposited over the dielectric layer. A via opening is formed in the second aluminum-containing layer through to the conductive line, wherein the via opening has chamferless sidewalls.

Growing community of inventors

Dresden, Germany

Cheng Xu