Taiwan Semiconductor Manufacturing Comp. Ltd.

Realtek Semiconductor Inc.

Cheng-Wei Luo

Hsiao-Tsung Yen

Ta-Hsun Yeh

Yuh-Sheng Jean

Chin-Wei Kuo

Kai-Yi Huang

Chieh-Pin Chang

Min-Chie Jeng

Kung-Hao Liang

Jun-Cheng Huang

Chewn-Pu Jou

Yu-Ling Lin

Kuan-Yu Shih

Jian-You Chen

Chih-Yu Tsai

The present invention discloses an inductor apparatus. Each of a first section of a second and a fourth quadrant loops are bridged to a first section of a former quadrant loop and are bridged to a third section to a second section of a diagonal quadrant loop. Each of a second section of the second and the fourth quadrant loops are coupled to a third section of the diagonal quadrant loop, and to the second section of a former quadrant loop. A first section of a third quadrant loop is coupled to a first section of the fourth quadrant loop, and to a third section of the first quadrant loop. The second section of the third quadrant loop is coupled to a second section of the fourth quadrant loop and to a third section of the third quadrant loop, and to a third section of the first quadrant loop.

Inductor apparatus

Semiconductor devices and methods of formation are provided herein. A semiconductor device includes a first inductor, a patterned ground shielding (PGS) proximate the first inductor comprising one or more portions and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. The semiconductor device also has a configuration including a first inductor on a first side of the PGS, a second inductor on a second side of the PGS and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. Selective coupling of portions of the PGS by activating or deactivating switches alters the behavior of the first inductor, or the behavior and interaction between the first inductor and the second inductor. A mechanism is thus provided for selectively configuring a PGS to control inductive or other properties of a circuit.

Semiconductor device with patterned ground shielding

An inductor device includes a first coil and a second coil. The first coil includes a first connection member and a plurality of first circles. At least two first circles of the first circles are located at a first area, and half of the first circle of the first circles is located at a second area. The second coil includes a second connection member and a plurality of second circles. At least two second circles of the second circles are located at the second area, and half of the second circle of the second circles is located at the first area. The first connection member is coupled to the at least two first circles and the half of the first circle. The second connection member is coupled to the at least two second circles and the half of the second circle.

Inductor device

An integrated stack transformer is provided, wherein the integrated stack transformer includes a first winding, a second winding and a third winding implemented by a first metal layer, and a fourth winding and a fifth winding implemented by a second metal layer. The second winding is positioned between the first winding and the third winding, the fourth winding substantially overlaps the first winding, the fifth winding substantially overlaps the third winding, and a distance between the fifth winding and the fourth winding is less than a distance between the third winding and the first winding. The first winding, the third winding, the fourth winding and the fifth winding form a part of one of a primary inductor and a secondary inductor of the integrated stack transformer, and the second winding is a part of the other of the primary inductor and the secondary inductor.

Integrated stack transformer

A method of making a slow wave inductive structure includes depositing a first dielectric layer over a first substrate. The method further includes forming a first conductive winding in the first dielectric layer. The method further includes bonding a second substrate to the first dielectric layer, wherein the second substrate is physically separated from the first conductive winding, and the second substrate has a thickness ranging from about 50 nanometers (nm) to about 150 nm. The method further includes depositing a second dielectric layer over the second substrate. The method further includes forming a second conductive winding in the second dielectric layer, wherein the second substrate is physically separated from the second conductive winding.

Method of making slow wave inductive structure

An integrated inductor is provided. The integrated inductor includes a first winding and a second winding, and has a first end, a second end, and a node. The first winding utilizes the first end and the node as two ends thereof and includes a first coil and a second coil, which do not overlap. The second winding utilizes the second end and the node as two ends thereof and includes a third coil and a fourth coil, which do not overlap. The first coil and the third coil have an overlapping area, and the second coil and the fourth coil have an overlapping area. The first coil is surrounded by the third coil, and the fourth coil is surrounded by the second coil.

Highly symmetric integrated inductor

A semiconductor structure includes a first inductor, a second inductor, and a first input/output (I/O) pad. The first I/O pad is coupled to the first inductor and the second inductor. The first I/O pad, a first central axis of a first magnetic field of the first inductor, and a second central axis of a second magnetic field of the second inductor are disposed sequentially along a first direction.

Semiconductor structure

Inductor device includes first and a second coils. First coil is wound into plural first circles. Second coil is wound into plural second circles. First connection member is coupled to first circle between outermost and innermost sides among first circles located at first area and first circle on outermost side among first circles located at second area. Second connection member is coupled to second circle on outermost side among second circles located at first area and second circle between outermost and innermost sides among second circles located at second area. At least two first circles of first circles are located at first area, and half of first circle of first circles is located at second area. Half of second circle of second circles is located at first area, and at least two second circles of second circles are located at second area.

A tank circuit structure includes a first gate layer, a first substrate, a first shielding layer, a first inductor, a second inductor and a first inter metal dielectric (IMD) layer. The first substrate is over the first gate layer. The first shielding layer is over the first gate layer. The first inductor is over the first shielding layer. The second inductor is below the first substrate. The first IMD layer is between the first substrate and the first shielding layer.

Tank circuit structure and method of making the same

An inductor device includes a first coil and a second coil. The first coil is wound into a plurality of first circles, and the second coil is wound into a plurality of second circles. At least two of the second circles are interlaced with at least two of the first circles on a first side. The at least two of the second circles are disposed adjacent to each other on the first side. At least one of the first circles is only interlaced with at least one of the second circles on a second side. At least another one of the first circles is only interlaced with at least another one of the second circles on the second side.

A slow wave inductive structure includes a first substrate. The slow wave inductive structure further includes a first conductive winding over the first substrate. The slow wave inductive structure further includes a second substrate over the first substrate, wherein a distance between the first conductive winding and the second substrate ranges from about 1 micron (&#x3bc;m) to about 2 &#x3bc;m, and the second substrate comprises polysilicon or doped silicon. The slow wave inductive structure further includes a second conductive winding on an opposite side of the second substrate from the first conductive winding.

Slow wave inductive structure and method of forming the same

An integrated circuit is provided. The integrated circuit includes a first trace, a second trace and a third trace. The first trace, the second trace and the third trace are each a continuous trace. The first trace, the second trace and the third trace together use only two conductor layers of a semiconductor structure. In a crossing area of the first trace, the second trace and the third trace, the first trace crosses the second trace once, the first trace crosses the third trace once, and the second trace crosses the third trace once.

Semiconductor component

A semiconductor element includes a first coil substantially located at a first plane; a second coil substantially located at the first plane; a connecting section that connects the first coil and the second coil; a third coil substantially located at a second plane different from the first plane; and a fourth coil substantially located at the second plane. The third coil and the first coil are connected through a through structure, and the fourth coil and the second coil are connected through a through structure. The third coil and the fourth are not directly connected.

Semiconductor element

A semiconductor element includes a first spiral coil, a second spiral coil, a connecting section, a first guide segment, and a second guide segment. The first spiral coil is formed with a first end and a second end, and includes a first inner turn and a first outer turn. The first inner turn is located in a range surrounded by the outer turn, and the first end and the second end are located at the first inner turn. The second spiral coil and the first spiral coil are located in substantially a same metal layer. The connecting section connects the first spiral coil and the second spiral coil. The first guide segment is connected to the first end. The second guide segment is connected to the second end. The first guide segment and the second guide segment are fabricated in a metal layer different from a metal layer of the first spiral coil.

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Hsinchu, Taiwan

Cheng-Wei Luo