Au Optronics Corporation

Cheng-Wei Chou

Chia-Yu Chen

Hung-Che Ting

Tsung-Hsiang Shih

Hsueh-Hsing Lu

A pixel structure includes a thin film transistor device. The thin film transistor device includes a first connection electrode, a second connection electrode, an oxide semiconductor channel layer, a gate insulation layer, a gate electrode, a dielectric layer, a source electrode and a drain electrode. The oxide semiconductor channel layer at least partially covers a top surface of the first connection electrode and a top surface of the second connection electrode. The gate electrode is disposed on the gate insulation layer. The dielectric layer is disposed on the gate electrode and the gate insulation layer. The gate insulation layer and the dielectric layer have a first contact hole at least partially exposing the top surface of the first connection electrode and a second contact hole at least partially exposing the top surface of the second connection electrode. The source electrode is electrically connected to the first connection electrode via the first contact hole, and the drain electrode is electrically connected to the second connection electrode via the second contact hole.

Pixel structure and method of fabricating the same

A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.

Growing community of inventors

Hsin-Chu, Taiwan

Cheng-Wei Chou