International Business Machines Corporation

Industrial Technology Research Institute

National Central University

Cheng-Wei Chien

Guohan Hu

Young-Shying Chen

Ding-Yeong Wang

Keng-Ming Kuo

Jyh-Chen Chen

Yeeu-Chang Lee

Chang-Hung Chiang

A method includes depositing a magnetic track layer on a seed layer, depositing an alloy layer on the magnetic track layer, depositing a tunnel barrier layer on the alloy layer, depositing a pinning layer on the tunnel barrier layer, depositing a synthetic antiferromagnetic layer spacer on the pinning layer, depositing a pinned layer on the synthetic antiferromagnetic spacer layer and depositing an antiferromagnetic layer on the pinned layer, and another method includes depositing an antiferromagnetic layer on a seed layer, depositing a pinned layer on the antiferromagnetic layer, depositing a synthetic antiferromagnetic layer spacer on the pinned layer, depositing a pinning layer on the synthetic antiferromagnetic layer spacer, depositing a tunnel barrier layer on the pinning layer, depositing an alloy layer on the tunnel barrier layer and depositing a magnetic track layer on alloy layer.

Magnetic domain wall shift register memory devices with high magnetoresistance ratio structures

A device includes a seed layer, a magnetic track layer disposed on the seed layer, an alloy layer disposed on the magnetic track layer, a tunnel barrier layer disposed on the alloy layer, a pinning layer disposed on the tunnel barrier layer, a synthetic antiferromagnetic layer spacer disposed on the pinning layer, a pinned layer disposed on the synthetic antiferromagnetic spacer layer and an antiferromagnetic layer disposed on the pinned layer, and another device includes a seed layer, an antiferromagnetic layer disposed on the seed layer, a pinned layer disposed on the antiferromagnetic layer, a synthetic antiferromagnetic layer spacer disposed on the pinned layer, a pinning layer disposed on the synthetic antiferromagnetic layer spacer, a tunnel barrier layer disposed on the pinning layer, an alloy layer disposed on the tunnel barrier layer and a magnetic track layer disposed on alloy layer.

A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45&#xb1;5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction.

3-axis magnetic field sensor, method for fabricating magnetic field sensing structure and magnetic field sensing circuit

Providing a fabrication method of a periodic domain inversion structure. A nonlinear optical ferroelectric material substrate is provided. A photoresist layer is formed on the upper and the lower surface of the substrate, and periodic gratings formed by interference of two laser beams are employed to expose the photoresist layer on the upper surface. Meanwhile, the two laser beams pass through the substrate, so the periodic gratings are used to expose the photoresist layer on the lower surface. A development process is performed to form a periodic photoresist pattern on the two surfaces of the substrate. A conductive layer is formed above the substrate for covering the photoresist pattern and the surface of the exposed substrate. The photoresist pattern and a portion of the conductive layer thereon are removed by lift-off. A voltage is applied to the substrate via the remaining conductive layer to polarize parts of the substrate.

Growing community of inventors

Hsinchu, Taiwan

Cheng-Wei Chien