Taiwan Semiconductor Manufacturing Comp. Ltd.

National Science Council

Cheng-Tung Lin

Teng-Chun Tsai

Li-Ting Wang

De-Fang Chen

Huan-Just Lin

Huang-Yi Huang

Wei-Jung Lin

Chih-Tang Peng

Hong-Mao Lee

Chi-Yuan Chen

Chih-Wei Chang

Chen-Hua Douglas Yu

Huicheng Chang

Chien-Hsun Wang

Ming-Hsing Tsai

Hui-Cheng Chang

Bing-Hung Chen

Shau-Lin Shue

Yung-Cheng Lu

Ming-Ching Chang

Chun-Hung Lee

Hsiang-Yi Wang

Chia-Han Lai

Chii-Ming M Wu

Hung-Ta Lin

Chi-Hsuan Ni

Tze-Liang Lee

Tai-Chun Huang

Jyh-Cherng Sheu

Sheng-Hsuan Lin

Chen-Nan Yeh

Kuo-Yin Lin

Wei-Yip Loh

Hung-Hsu Chen

Yan-Ming Tsai

Ya-Yi Cheng

Yung-Sheng Chiu

Wan-Chun Pan

Yu-Wen Cheng

Yu-Shiuan Wang

Ming-Liang Yen

Chung-Shi Liu

Yee-Chia Yeo

Kuo-Cheng Ching

Mei-Yun Wang

Sung-Li Wang

Chun-Hsiung Lin

Cheng-Hung Chang

Chia-Lin Yu

Chun-I Tsai

Huang-Chung Cheng

Min-Hsiu Hung

Pei-Wen Wu

Yida Li

Chih-Hao Wang

Chi On Chui

Ching-Wei Tsai

Carlos H Diaz

Jean-Pierre Colinge

Wen-Chin Lee

Liang-Gi Yao

Ching-Feng Fu

Jeff J Xu

Cheng-Ming Wu

Ming-Chyi Liu

Jenn Ming Huang

Chi-On Chui

Chu-Yun Fu

Yu-Hua Lee

Min-Hsiung Chiang

Chih-wei Chang

Shih-Wei Chou

James Cheng-Ming Wu

Shu-Tine Yang

Cary Chia-Chiung Lo

Yihang Chiu

Gin Jei Wang

Li-Lan Wu

Betty Hsieh

Chi-Hung Chao

Pei-Fen Chou

According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Vertical device having a protrusion source

Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Contact with a silicide region

A semiconductor device and methods of formation are provided. A semiconductor device includes an annealed cobalt plug over a silicide in a first opening of the semiconductor device, wherein the annealed cobalt plug has a repaired lattice structure. The annealed cobalt plug is formed by annealing a cobalt plug at a first temperature for a first duration, while exposing the cobalt plug to a first gas. The repaired lattice structure of the annealed cobalt plug is more regular or homogenized as compared to a cobalt plug that is not so annealed, such that the annealed cobalt plug has a relatively increased conductivity or reduced resistivity.

Contact structure and formation thereof

According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.

Method of forming isolation layer

A semiconductor device includes a first vertical device having a first threshold and second vertical device having a second threshold. The first vertical device includes a first source; a first channel over the first source; a first drain over the first channel; a first conductive layer adjacent to the first channel; and a first gate adjacent to the first conductive layer. The second vertical device includes a second source; a second channel over the second source; a second drain over the second channel; a second conductive layer adjacent to the second channel; and a second gate adjacent to the second conductive layer.

Semiconductor device with multiple threshold voltage and method of fabricating the same

Vertical device having a protrusion structure

Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate and forming an opening in the dielectric layer to expose a conductive element. The method also includes forming a conductive layer over the conductive element and modifying an upper portion of the conductive layer using a plasma operation to form a modified region. The method further includes forming a conductive plug over the modified region.

Formation method of interconnection structure of semiconductor device

Method of forming a contact with a silicide region

A nanowire field effect transistor (FET) device and method for forming a nanowire FET device are provided. A nanowire FET including a source region and a drain region is formed. The nanowire FET further includes a nanowire that connects the source region and the drain region. A source silicide is formed on the source region, and a drain silicide is formed on the drain region. The source silicide is comprised of a first material that is different from a second material comprising the drain silicide.

Nanowire MOSFET with different silicides on source and drain

Growing community of inventors

Hsinchu County, Taiwan

Cheng-Tung Lin