Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng-Tsung Wu

Ding-I Liu

Po-Hsiung Leu

Si-Wen Liao

Kai-Shiung Hsu

Yen-Chan Lo

Yi-Fang Lai

Jheng-Uei Hsieh

Hsiang-Sheng Kung

Shian-Huei Lin

Jui-Fu Hsu

A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.

Method for controlling plasma in semiconductor fabrication

A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Thermal chemical vapor deposition system and operating method thereof

Method and system for controlling plasma in semiconductor fabrication

Growing community of inventors

Hsinchu, Taiwan

Cheng-Tsung Wu