Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng-Ting Ding

Chih Chieh Yeh

Shih-Hao Lin

Chien-Chih Lin

Tsai-Yu Huang

Szu-Chi Yang

Tsung-Hung Lee

Po-Kai Hsiao

Chien-Chih Lee

Allen Chien

The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.

Interface trap charge density reduction

Growing community of inventors

Hsinchu, Taiwan

Cheng-Ting Ding