Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng-Tao Lin

Dun-Nian Yaung

Jen-Cheng Liu

Szu-Ying Chen

Yi-Shin Chu

Meng-Hsun Wan

A device includes a plurality of isolation spacers, and a plurality of bottom electrodes, wherein adjacent ones of the plurality of bottom electrodes are insulated from each other by respective ones of the plurality of isolation spacers. A plurality of photoelectrical conversion regions overlaps the plurality of bottom electrodes, wherein adjacent ones of the plurality of photoelectrical conversion regions are insulated from each other by respective ones of the plurality of isolation spacers. A top electrode overlies the plurality of photoelectrical conversion regions and the plurality of isolation spacers.

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Kaohsiung, Taiwan

Cheng-Tao Lin