Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng San Chou

Chin-Min Lin

Wen-Chuan Tai

Hsiang-Fu Chen

Hua-Shu Ivan Wu

Fan Hu

Ching-Kai Shen

Yi-Chia Lee

Chen Hsiung Yang

Chia-Hua Chu

Tzu-Heng Wu

Yi-Heng Tsai

A display apparatus is disclosed. The display apparatus includes a sensor layer including a plurality of sensors, a pixel layer disposed on the sensor layer and including a plurality of pixel areas and a plurality of pixels in the pixel areas, and an opaque layer disposed between the sensor layer and the pixel layer and including holes corresponding to at least one of the pixel areas.

Biometric sensor and methods thereof

A method of fabricating a sensing apparatus is disclosed. The method includes providing a substrate that includes a plurality of image sensors, forming an optical filtering film on the substrate, and forming a collimator on the optical filtering film. The method further includes forming a blocking layer on the collimator and forming an illumination layer on the blocking layer. The illumination layer is configured to illuminate an object placed above the illumination layer. The image sensors are configured to detect a portion of light reflected from the object.

The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.

Wafer level integrated MEMS device enabled by silicon pillar and smart cap

The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity.

A sensing apparatus is disclosed. The sensing apparatus includes an image sensor; a collimator above the image sensor, the collimator having an array of apertures; an optical filtering layer between the collimator and the image sensor, wherein the optical filtering layer is configured to filter a portion of light transmitted through the array of apertures; and an illumination layer above the collimator.

A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.

Semiconductor structure and manufacturing method thereof

The present disclosure relates to a capacitive fingerprint sensor having an air gap, which is disposed under a sensing electrode and that is configured to improve sensing sensitivity by reducing a parasitic capacitance of the capacitive fingerprint sensor, and an associated method. In some embodiments, the capacitive fingerprint sensor includes a plurality of semiconductor devices disposed over a substrate. An interconnect structure is disposed over the semiconductor devices. A sensing electrode is disposed over the interconnect structure to form a capacitance between the sensing electrode and finger skins. An air gap is disposed under the sensing electrode and enclosed by the sensing electrode and the interconnect structure.

Capacitive fingerprint sensor

A semiconductor structure includes a first substrate, a second substrate, a first sensing structure over the first substrate, and between the first substrate and the second substrate, a via extending through the second substrate, and a second sensing structure over the second substrate, and including an interconnect structure electrically connected with the via, and a sensing material at least partially covering the interconnect structure.

Growing community of inventors

Hsinchu, Taiwan

Cheng San Chou