United Microelectronics Corp.

Cheng-Ping Kuo

Shih-Hung Tsai

Po-Kuang Hsieh

Yu-Ting Tseng

Kuan-Hao Tseng

Chien-Ting Lin

Chueh-Fei Tai

A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.

Method for fabricating semiconductor device

A semiconductor device includes a metal gate on a substrate, a polysilicon layer on the metal gate, a hard mask on the polysilicon layer, and a source/drain region adjacent to two sides of the metal gate. Preferably, the metal gate includes a ferroelectric (FE) layer on the substrate, a work function metal layer on the FE layer, and a low resistance metal layer on the work function metal layer.

Semiconductor device and method for fabricating the same

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.

Growing community of inventors

Pingtung County, Taiwan

Cheng-Ping Kuo