Applied Materials, Inc.

The State University of New York

Cisco Technology, Inc.

Cheng Pan

Biao Liu

Lei Zhou

Chang Ke

Paul F Ma

Liqi Wu

Michael Sterling Jackson

Erica Chen

Ludovic Godet

Srinivas D Nemani

David P Thompson

Tobin Kaufman-Osborn

Miriam Rafailovich

Yuanhong Guo

Hongfei Li

Shuyi Zhang

Mei Yin Chang

Ellie Y Yieh

Alexandros T Demos

Chentsau Chris Ying

Kang Sub Yim

Plamen Nedeltchev

Jong Mun Kim

Bo Xie

Song-Moon Suh

Dong Li

Taewan Kim

Sure Ngo

Rebecca Isseroff

Andrew Chen

Sneha Chittabathini

Alexandra Tse

Qingliang Lin

Fangyan Ye

Xuanbei Lu

Lee Blackburn

Arthur Chen

In one embodiment, an illustrative method herein may comprise: recognizing, by a device, key entries within a textual data set having a plurality of files; forming, by the device, a group of files by selecting a subset of the plurality of files that are considered by the device to be similar according to a tolerance-based similarity metric and a bi-dimensional hierarchical multiclass classification; generating, by the device, a metadata profile for the group of files by aggregating metadata from its constituent files; and causing, by the device and based on the metadata profile, a risk identification or remediation action to be performed on the textual data set.

Security audit of data-at-rest

Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

Wafer treatment for achieving defect-free self-assembled monolayers

Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

Methods for enhancing selectivity in SAM-based selective deposition

Methods and apparatus for removing deposits in self-assembled monolayer (SAM) based selective deposition process schemes using cryogenic gas streams are described. Some methods include removing deposits in self-assembled monolayer (SAM) based selective depositions by exposing the substrate to cryogenic aerosols to remove undesired deposition on SAM protected surfaces. Processing chambers for cryogenic gas assisted selective deposition are also described.

Methods and apparatus for cryogenic gas stream assisted SAM-based selective deposition

Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.

Residual removal

Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

Enhanced selective deposition process

A proton exchange membrane fuel cell that includes: a positive electrode; a negative electrode; a polyelectrolyte membrane; and platelet-shaped nanoparticles of gold, platinum, palladium, silver, copper or their alloys or mixtures thereof. The polyelectrolyte membrane includes a sulfonated tetrafluoroethylene based fluoropolymer-copolymer and is disposed between the positive electrode and the negative electrode. The nanoparticles contact the surface of the proton exchange membrane increase the efficiency of the fuel cell by at least 50%.

Gold nanoparticles-enhanced proton exchange membrane fuel cell

A polymer electrolyte membrane fuel cell that includes a positive electrode, a negative electrode, a polyelectrolyte membrane and a solution of reduced graphene oxide and/or graphene oxide functionalized with metallized nanoparticles. The electrodes are coated with a polymer and the polyelectrolyte membrane has a hydrophobic exterior surface that is subjected to ultraviolet/ozone (UV/O) exposure, which changes the hydrophobic, exterior surface to a hydrophilic exterior surface. The polyelectrolyte membrane is disposed between the positive electrode and the negative electrode and can include a sulfonated tetrafluoroethylene based fluoropolymer-copolymer. The solution forms a coating on the hydrophilic exterior surface of the polymer electrolyte membrane and the positive and negative electrodes. The positive and negative electrodes can be coated with a polymer, preferably polytetrafluoroethylene (PTFE) that can be subjected to ultraviolet/ozone (UV/O) exposure. The metallized nanoparticles increase the efficiency of the fuel cell by at least 50% when the feed gas includes at least 1000 ppm carbon monoxide.

Attachment of graphene and metal or metal oxide-modified graphene to organic polymers used in organic fuel cells

Embodiments of the disclosure generally provide multi-layer dielectric stack configurations that are resistant to plasma damage. Methods are disclosed for the deposition of thin protective low dielectric constant layers upon bulk low dielectric constant layers to create the layer stack. As a result, the dielectric constant of the multi-layer stack is unchanged during and after plasma processing.

Multi-layer dielectric stack for plasma damage protection

Growing community of inventors

San Jose, CA, United States of America

Cheng Pan