Advanced Semiconductor Engineering, Inc.

Cheng-Nan Lin

Wei-Tung Chang

Jen-Chieh Kao

Chieh-Chen Fu

Huei-Shyong Cho

I-Chia Lin

Kuo Hsien Liao

Kuo-Hsien Liao

Ming-Chiang Lee

Hsu-Nan Fang

Yung-I Yeh

Shih-Ren Chen

A semiconductor device package is disclosed. The semiconductor device package includes a carrier, a first electronic component disposed on the carrier and a support component disposed on the carrier. The semiconductor device package also includes a second electronic component disposed on the first electronic component and supported by the support component.

Semiconductor device package

An electronic device package includes a first substrate, a second substrate and a conductive layer. The first substrate includes a first bonding pad, and a cavity exposing the first bonding pad. The second substrate is laminated on the first substrate. The second substrate includes a second bonding pad at least partially inserting into the cavity of the first substrate. The conductive layer is disposed in the cavity and at least between the first bonding pad and the second bonding pad to connect the first bonding pad and the second bonding pad.

Device package

The present disclosure provides a semiconductor device package. The semiconductor device package includes a first electronic component having an active surface and a backside surface opposite to the active surface and a first antenna layer disposed on the backside surface of the first electronic component. The semiconductor device package further includes a first dielectric layer covering the first antenna layer and a second antenna layer disposed over the first antenna layer. The second antenna layer is spaced apart from the first antenna layer by the first dielectric layer. A method of manufacturing a semiconductor device package is also disclosed.

Semiconductor device package and method of manufacturing the same

A semiconductor device package includes a substrate, a first molding compound and antenna layer. The substrate has a first surface and a second surface opposite to the first surface. The first molding compound is disposed on the first surface of the substrate. The antenna layer is disposed on the first molding compound. The substrate, the first molding compound and the antenna layer define a cavity.

An electronic device package includes a first conductive substrate, a second conductive substrate and a dielectric layer. The first conductive substrate has a first coefficient of thermal expansion (CTE). The second conductive substrate is disposed on an upper surface of the first conductive substrate and electrically connected to the first conductive substrate. The second conductive substrate has a second CTE. The dielectric layer is disposed on the upper surface of the first conductive substrate and disposed on at least one sidewall of the second conductive substrate. The dielectric layer has a third CTE. A difference between the first CTE and the second CTE is larger than a difference between the first CTE and the third CTE.

Electronic device package and method for manufacturing the same

A semiconductor device package includes a first substrate, a second substrate, a first support element, a second support element and an electronic component. The first substrate has a first surface and a second surface opposite to the first surface. The first substrate has a conductive pad adjacent to the first surface of the first substrate. The second substrate is disposed over the first surface of the first substrate. The first support element is disposed between the first substrate and the second substrate. The first support element is disposed adjacent to an edge of the first surface of the first substrate. The second support element is disposed between the first substrate and the second substrate. The second support element is disposed far away from the edge of the first surface of the first substrate. The electronic component is disposed on the second surface of the first substrate. A projection line of a contact point between the second support element and the conductive pad on the second surface of the first substrate is physically spaced apart from a projection line of a lateral surface of the electronic component on the second surface of the first substrate.

The present disclosure provides a semiconductor package device and a method for manufacturing the same. In embodiments of the present disclosure, a semiconductor package device includes a carrier, a first antenna, a second antenna, a package body and a first shield. The carrier includes an antenna area and a component area. The first antenna is formed on the antenna area. The second antenna extends from the antenna area and over the first antenna. The second antenna is electrically connected to the first antenna. The package body includes a first portion covering the component area and a second portion covering the antenna area. The first shield is conformally formed on the first portion of the package body and exposes the second portion of package body.

Semiconductor package device and method of manufacturing the same

A semiconductor device package includes: (1) a carrier; (2) an electronic component disposed over a top surface of the carrier; (3) a package body disposed over the top surface of the carrier and covering the electronic component; and (4) a shield layer, including a first magnetically permeable layer disposed over the package body, a first electrically conductive layer disposed over the first magnetically permeable layer, and a second magnetically permeable layer disposed over the first electrically conductive layer. The first electrically conductive layer is interposed between the first magnetically permeable layer and the second magnetically permeable layer. A permeability of the first electrically conductive layer is different from a permeability of the first magnetically permeable layer and a permeability of the second magnetically permeable layer.

A semiconductor device package includes a carrier, an electronic component disposed over a top surface of the carrier, and a package body disposed over the top surface of the carrier and covering the electronic component. The semiconductor device package further includes a shield layer, which in turn includes a first electrically conductive layer, a first magnetically permeable layer, and a second electrically conductive layer, where the first magnetically permeable layer is interposed between and directly contacts the first electrically conductive layer and the second electrically conductive layer.

The present disclosure relates to a semiconductor device package and a method for manufacturing the semiconductor device package. The semiconductor device package includes a substrate, a grounding element, a component, a package body and a conductive layer. The grounding element is disposed in the substrate and includes a connection surface exposed at a second portion of a lateral surface of the substrate. The component is disposed on a top surface of the substrate. The package body covers the component and the top surface of the substrate. A lateral surface of the package body is aligned with the lateral surface of the substrate. The conductive layer covers a top surface and the lateral surface of the package body, and further covers the second portion of the lateral surface of the substrate. A first portion of the lateral surface of the substrate is exposed from the conductive layer.

Semiconductor device packages

A semiconductor device package includes a substrate, at least one component, a package body, a first conductive layer, a first shielding layer, a second shielding layer and a second conductive layer. The component is disposed on a first surface of the substrate. The package body is disposed on the first surface of the substrate and covers the component. The first conductive layer covers the package body and at least a portion of the substrate. The first shielding layer covers the first conductive layer and has a first thickness and includes a high conductivity material. The second shielding layer covers the first shielding layer and has a second thickness and includes a high permeability material. A ratio of the first thickness to the second thickness being in a range of 0.2 to 3. The second conductive layer covers the second shielding layer.

The semiconductor package includes a substrate, a plurality of components, an interposer, an electrical interconnect and a first package body. The substrate has a first surface and a second surface opposite to the first surface. A first component is mounted on the first surface of the substrate, and a second component is mounted on the second surface of the substrate. The interposer has a first surface. The electrical interconnect connects the first surface of the interposer to the second surface of the substrate. The first package body is disposed on the second surface of the substrate and encapsulates the second component, the electrical interconnect and at least a portion of the interposer.

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Kaohsiung, Taiwan

Cheng-Nan Lin