Epistar Corporation

Cheng-Nan Han

Min-Hsun Hsieh

Hsing-Chao Chen

Hung-Hsuan Chen

Hsin-Mao Liu

Tsung-Xian Lee

Masafumi Sano

Tzer-Perng Chen

Jen-Chau Wu

Chih-Peng Ni

Chien-Liang Liu

Ching-San Tao

Chih-Ming Wang

Been-Yu Liaw

Jui-Hsien Chang

Steve Meng-Yuan Hong

Ching San Tao

Wei-Yu Chen

Chien-Fu Huang

Yi-Ming Chen

Tzu-Chieh Hsu

Shih-I Chen

Ming-Chi Hsu

Yih-Hua Renn

Ching-Pei Lin

Yu-Ren Peng

Zong-Xi Chen

Pei-Lun Chien

Tien-Yang Wang

The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Optoelectronic element having reflective layer in contact with transparent layer covering side and bottom surfaces of the optoelectronic element

The present application discloses a light-emitting device including a first support structure having a first surface, a plurality of light-emitting elements arranged on the first surface, and a first adhesive layer arranged on the first support structure. Each light-emitting element has a side wall, a bottom surface, a first electrode pad, and a second electrode pad arranged on the bottom surface. The first adhesive layer surrounds the side wall and does not directly contact the bottom surface. The first support structure includes a plurality of through holes located on positions corresponding to the first electrode pad and the second electrode pad.

Light-emitting device and the method of manufacturing the same

Optoelectronic element

An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

Light emitting diode

An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a first width; an adhesive material enclosing the optoelectronic element and having a second width larger than the first width; a phosphor structure formed between the optoelectronic element and the adhesive material; and a transparent substrate formed on the adhesive material.

Optoelectronic system

Light-emitting diode

This disclosure discloses a light-emitting device. The light-emitting device includes a transparent substrate with a recess and an upper surface; a wavelength converting layer covering the recess and the upper surface of the transparent substrate; and a light-emitting diode arranged in the recess and over the wavelength converting layer.

Light emitting device

An optoelectronic element includes an optoelectronic unit having a first top surface; a first metal layer on the first top surface; a first transparent structure surrounding the optoelectronic unit and exposing the first top surface; and a first contact layer on the first transparent structure, including a connective part electrically connected with the first metal layer.

Optoelectronic element and manufacturing method thereof

A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Light-emitting device

An optoelectronic element includes an optoelectronic unit having a first top surface, a first bottom surface opposite to the first top surface, and a lateral surface between the first top surface and the first bottom surface; a first transparent structure covering the lateral surface and exposing the first top surface of the optoelectronic unit; a first insulating layer on the first top surface and the first transparent structure; a second insulating layer on the first insulating layer; a first opening through the first insulating layer and the second insulating layer; and a first conductive layer on the second insulating layer and electrically connecting to the optoelectronic unit via the first opening.

Growing community of inventors

Hsinchu, Taiwan

Cheng-Nan Han