Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Cheng-Lun Tsai

Hung-Wen Su

Chun-Chieh Lin

Cheng-Hui Weng

Kai-Shiang Kuo

Chun-Sheng Chen

Huei-Wen Hsieh

Jen-Wei Liu

Ya-Lien Lee

Chun-Yi Lee

Chia-Pang Kuo

Yao-Min Liu

Jenn-Chang Hwang

Wen-Hsuan Chen

Huan-yu Shih

Li-Shiuan Tsai

An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the same

A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

Diffusion barrier for semiconductor device and method

An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.

N-type organic thin film transistor, ambipolar field-effect transistor, and method of fabricating the same

Growing community of inventors

Hsinchu, Taiwan

Cheng-Lun Tsai