Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng Lin Huang

Mong-Song Liang

Minghsing Tsai

Winston Shue

A method of forming a protective layer included in a metal filled semiconductor feature including providing a substrate including an insulating dielectric material having an anisotropically etched opening for forming a semiconductor feature; conformally depositing over the semiconductor feature at least one metal layer to substantially fill the semiconductor feature at least a portion of the at least one metal layer containing dopant impurities; and, thermally treating the substrate for a time period sufficient to redistribute the dopant impurities to preferentially collect along the periphery of the at least one metal layer.

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Taipei, Taiwan

Cheng Lin Huang