Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng Kun Lin

Shou-Zen Chang

ChaoChieh Tsai

Chi Ming Yang

Chin-Hsiung Ho

Kuo-Hsien Cheng

Wen Zen Chiu

Shih Hui Chang

Faults occurring in the operation of a rapid thermal process system are detected and dynamically controlled in-situ. A data set is generated which represents the power applied to heating elements which are spatially arranged in a plurality of zones. The data is converted to a sequence of fractions respectively representing the power applied to each zone relative to the total applied power. The fractions are sequentially arranged and a least squares straight line fit for the fractions is calculated. The slope of the calculated straight line fit is used in a statistical process control system to determine whether a fault has occurred, and to make appropriate corrections in process control parameters, such as the length of time the process is carried out.

Method of detecting and controlling in-situ faults in rapid thermal processing systems

A method for forming salicide contacts and polycide conductive lines in integrated circuits is described which employs the ion implantation of both silicon and arsenic into polysilicon structures and into source/drain MOSFET elements is described. The method is effective in reducing gate-to-source/drain bridging in the manufacture of sub-micron CMOS integrated circuits and improving the conductivity of sub-micron wide polycide lines. Silicon is implanted into the polysilicon and into the source/drain surfaces forming a amorphized surface layer. Next a low dose, low energy arsenic implant is administered into the amorphized layer. The low dose shallow arsenic implant in concert with the amorphized layer initiates an equalized formation of titanium silicide over both NMOS and PMOS devices in CMOS integrated circuits without degradation of the PMOS devices. Amorphization by the electrically neutral silicon ions permits the use of a lower dose of arsenic than would be required if arsenic alone were implanted. In addition to amorphization, the implanted silicon prevents the formation of microvoids by providing silicon towards titanium silicide formation. The combined amorphization effect of the silicon and arsenic implants also facilitates a silicide phase transition on sub-micron wide polycide lines thereby improving their conductivity.

Silicon and arsenic double implanted pre-amorphization process for

A method for forming salicide contacts and polycide conductive lines in integrated circuits is described which employs the ion implantation of both germanium and arsenic into polysilicon structures and into source/drain MOSFET elements is described. The method is particularly beneficial in the manufacture of sub-micron CMOS integrated circuits. Germanium is implanted into the polysilicon and into the source/drain surfaces forming a amorphized surface layer. Next a low dose, low energy arsenic implant is administered into the amorphized layer. The low dose shallow arsenic implant in concert with the amorphized layer initiates a balanced formation of titanium suicide over both NMOS and PMOS devices in CMOS integrated circuits without degradation of the PMOS devices with an accompanying reduction of gate-to-source/drain shorts. Amorphization by the electrically neutral germanium ions permits the use of a lower dose of arsenic than would be required if arsenic alone were implanted. The combined amorphization effect of the germanium and arsenic implants also facilitates a suicide phase transition on sub-micron wide polycide lines thereby improving their conductivity.

Germanium and arsenic double implanted pre-amorphization process for

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Taipei, Taiwan

Cheng Kun Lin