Taiwan Semiconductor Manufacturing Comp. Ltd.

Cheng-Jung Sung

Yee-Chia Yeo

Syun-Ming Jang Jang

Huicheng Chang

Liang-Yin Chen

Li-Ting Wang

Su-Hao Liu

Wen-Yen Chen

Tz-Shian Chen

Shiu-Ko JangJian

Yu-Ting Lin

Ching-Hwanq Su

Yu-Sheng Wang

Wei-Ming You

Chih-Cherng Jeng

A method includes forming a gate stack over a first semiconductor region, removing a second portion of the first semiconductor region on a side of the gate stack to form a recess, growing a second semiconductor region starting from the recess, implanting the second semiconductor region with an impurity, and performing a melting laser anneal on the second semiconductor region. A first portion of the second semiconductor region is molten during the melting laser anneal, and a second and a third portion of the second semiconductor region on opposite sides of the first portion are un-molten.

Melting laser anneal of epitaxy regions

A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.

Annealing methods for backside illumination image sensor chips

Growing community of inventors

Tainan, Taiwan

Cheng-Jung Sung